TN2425N8-G

TN2425N8-G Microchip Technology


TN2425-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005945A.pdf Hersteller: Microchip Technology
Description: MOSFET N-CH 250V 480MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 480mA (Tj)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 500mA, 10V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-89-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 1578 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.76 EUR
25+ 2.28 EUR
100+ 2.1 EUR
Mindestbestellmenge: 7
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Technische Details TN2425N8-G Microchip Technology

Description: MOSFET N-CH 250V 480MA SOT89-3, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 480mA (Tj), Rds On (Max) @ Id, Vgs: 3.5Ohm @ 500mA, 10V, Power Dissipation (Max): 1.6W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: SOT-89-3, Drive Voltage (Max Rds On, Min Rds On): 3V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V.

Weitere Produktangebote TN2425N8-G nach Preis ab 3.12 EUR bis 4.11 EUR

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TN2425N8-G TN2425N8-G Hersteller : Microchip Technology TN2425_B080913-965163.pdf MOSFET 250V 3.5Ohm
auf Bestellung 3238 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
13+4.11 EUR
25+ 3.38 EUR
100+ 3.12 EUR
Mindestbestellmenge: 13
TN2425N8-G TN2425N8-G Hersteller : MICROCHIP TECHNOLOGY tn2425.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 1.5A; 1.6W; SOT89-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Pulsed drain current: 1.5A
Power dissipation: 1.6W
Case: SOT89-3
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TN2425N8-G TN2425N8-G Hersteller : Microchip Technology TN2425-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005945A.pdf Description: MOSFET N-CH 250V 480MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 480mA (Tj)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 500mA, 10V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-89-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Produkt ist nicht verfügbar
TN2425N8-G TN2425N8-G Hersteller : MICROCHIP TECHNOLOGY tn2425.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 1.5A; 1.6W; SOT89-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Pulsed drain current: 1.5A
Power dissipation: 1.6W
Case: SOT89-3
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar