TN2504N8-G Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET N-CH 40V 890MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 890mA (Tj)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 20 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 1.77 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TN2504N8-G Microchip Technology
Description: MOSFET N-CH 40V 890MA TO243AA, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 890mA (Tj), Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V, Power Dissipation (Max): 1.6W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 1mA, Supplier Device Package: TO-243AA (SOT-89), Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 20 V.
Weitere Produktangebote TN2504N8-G nach Preis ab 1.59 EUR bis 2.32 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TN2504N8-G | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 40V 0.89A 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
TN2504N8-G | Hersteller : Microchip Technology |
MOSFETs 40V 1Ohm |
auf Bestellung 2180 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
TN2504N8-G | Hersteller : Microchip Technology |
Description: MOSFET N-CH 40V 890MA TO243AA Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 890mA (Tj) Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V Power Dissipation (Max): 1.6W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 1mA Supplier Device Package: TO-243AA (SOT-89) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 20 V |
auf Bestellung 11806 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
TN2504N8-G | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 40V 0.89A 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||
|
|
TN2504N8-G | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 40V 0.89A 4-Pin(3+Tab) SOT-89 T/R |
Produkt ist nicht verfügbar |
|||||||||||
 |
TN2504N8-G | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 40V 0.89A 4-Pin(3+Tab) SOT-89 T/R |
Produkt ist nicht verfügbar |
|||||||||||
 |
TN2504N8-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 890mA; Idm: 4.5A; 1.6W; SOT89-3 Mounting: SMD Case: SOT89-3 On-state resistance: 1Ω Kind of package: reel; tape Drain-source voltage: 40V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 0.89A Power dissipation: 1.6W Pulsed drain current: 4.5A Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||
|
|
TN2504N8-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 890mA; Idm: 4.5A; 1.6W; SOT89-3 Mounting: SMD Case: SOT89-3 On-state resistance: 1Ω Kind of package: reel; tape Drain-source voltage: 40V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 0.89A Power dissipation: 1.6W Pulsed drain current: 4.5A Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |