TN2510N8-G Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET N-CH 100V 730MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 730mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 5786 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 1.66 EUR |
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Technische Details TN2510N8-G Microchip Technology
Description: MOSFET N-CH 100V 730MA TO243AA, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 730mA (Tj), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TO-243AA (SOT-89), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 3V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V.
Weitere Produktangebote TN2510N8-G nach Preis ab 1.37 EUR bis 4.76 EUR
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TN2510N8-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3A; 1.6W; SOT89-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Pulsed drain current: 3A Power dissipation: 1.6W Case: SOT89-3 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 210 Stücke: Lieferzeit 7-14 Tag (e) |
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TN2510N8-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3A; 1.6W; SOT89-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Pulsed drain current: 3A Power dissipation: 1.6W Case: SOT89-3 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Kind of channel: enhanced |
auf Bestellung 210 Stücke: Lieferzeit 14-21 Tag (e) |
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TN2510N8-G | Hersteller : Microchip Technology |
Description: MOSFET N-CH 100V 730MA TO243AA Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 730mA (Tj) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-243AA (SOT-89) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V |
auf Bestellung 5786 Stücke: Lieferzeit 10-14 Tag (e) |
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TN2510N8-G | Hersteller : Microchip Technology |
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TN2510N8-G | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 100V 0.73A 4-Pin(3+Tab) SOT-89 T/R |
Produkt ist nicht verfügbar |
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TN2510N8-G | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 100V 0.73A 4-Pin(3+Tab) SOT-89 T/R |
Produkt ist nicht verfügbar |
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TN2510N8-G | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 100V 0.73A 4-Pin(3+Tab) SOT-89 T/R |
Produkt ist nicht verfügbar |