TN5325N3-G-P002 Microchip Technology
auf Bestellung 1784 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.41 EUR |
| 25+ | 1.18 EUR |
| 100+ | 1.13 EUR |
| 250+ | 1.05 EUR |
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Technische Details TN5325N3-G-P002 Microchip Technology
Description: MOSFET N-CH 250V 215MA TO92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 215mA (Ta), Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V, Power Dissipation (Max): 740mW (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TO-92-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| TN5325N3-G-P002 | Hersteller : MICROCHIP TECHNOLOGY |
 TN5325N3-G-P002 THT N channel transistors |
Produkt ist nicht verfügbar |
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,TO-226_straightlead.jpg "TN5325N3-G-P002") |
TN5325N3-G-P002 | Hersteller : Microchip Technology |
Description: MOSFET N-CH 250V 215MA TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 215mA (Ta) Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V |
Produkt ist nicht verfügbar |