TN5335K1-G Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET N-CH 350V 110MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110mA (Tj)
Rds On (Max) @ Id, Vgs: 15Ohm @ 200mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23 (TO-236AB)
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.28 EUR |
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Technische Details TN5335K1-G Microchip Technology
Description: MOSFET N-CH 350V 110MA SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110mA (Tj), Rds On (Max) @ Id, Vgs: 15Ohm @ 200mA, 10V, Power Dissipation (Max): 360mW (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: SOT-23 (TO-236AB), Drive Voltage (Max Rds On, Min Rds On): 3V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 350 V, Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V.
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Description: MOSFET N-CH 350V 110MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110mA (Tj) Rds On (Max) @ Id, Vgs: 15Ohm @ 200mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23 (TO-236AB) Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 350 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V |
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