| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.05 EUR |
| 25+ | 1.71 EUR |
| 100+ | 1.57 EUR |
| 500+ | 1.56 EUR |
| 1000+ | 1.37 EUR |
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Technische Details TN5335N8-G Microchip Technology
Description: MOSFET N-CH 350V 230MA TO243AA, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 230mA (Tj), Rds On (Max) @ Id, Vgs: 15Ohm @ 200mA, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TO-243AA (SOT-89), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 3V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 350 V, Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V.
Weitere Produktangebote TN5335N8-G nach Preis ab 1.59 EUR bis 2.09 EUR
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TN5335N8-G | Microchip Technology |
 Description: MOSFET N-CH 350V 230MA TO243AAPackaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Tj) Rds On (Max) @ Id, Vgs: 15Ohm @ 200mA, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-243AA (SOT-89) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 350 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V |
auf Bestellung 1096 Stücke: Lieferzeit 10-14 Tag (e) |
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TN5335N8-G | MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 350V; 230mA; Idm: 1.3A; 1.6W Case: SOT89-3 Mounting: SMD Kind of package: reel; tape Manufacturer standard package: 2000pcs. On-state resistance: 15Ω Pulsed drain current: 1.3A Power dissipation: 1.6W Polarisation: unipolar Drain current: 0.23A Kind of channel: enhancement Drain-source voltage: 350V Type of transistor: N-MOSFET Gate-source voltage: ±20V |
auf Bestellung 897 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| TN5335N8-G |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 350V 230MA TO243AA
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
Rds On (Max) @ Id, Vgs: 15Ohm @ 200mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
Description: MOSFET N-CH 350V 230MA TO243AA
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
Rds On (Max) @ Id, Vgs: 15Ohm @ 200mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
auf Bestellung 1096 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.09 EUR |
| 25+ | 1.74 EUR |
| 100+ | 1.59 EUR |
| TN5335N8-G |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 230mA; Idm: 1.3A; 1.6W
Case: SOT89-3
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 2000pcs.
On-state resistance: 15Ω
Pulsed drain current: 1.3A
Power dissipation: 1.6W
Polarisation: unipolar
Drain current: 0.23A
Kind of channel: enhancement
Drain-source voltage: 350V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 230mA; Idm: 1.3A; 1.6W
Case: SOT89-3
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 2000pcs.
On-state resistance: 15Ω
Pulsed drain current: 1.3A
Power dissipation: 1.6W
Polarisation: unipolar
Drain current: 0.23A
Kind of channel: enhancement
Drain-source voltage: 350V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
auf Bestellung 897 Stücke:
Lieferzeit 14-21 Tag (e)