auf Bestellung 1338 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.72 EUR |
| 25+ | 1.44 EUR |
| 100+ | 1.32 EUR |
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Technische Details TN5335N8-G Microchip Technology
Description: MOSFET N-CH 350V 230MA TO243AA, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 230mA (Tj), Rds On (Max) @ Id, Vgs: 15Ohm @ 200mA, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TO-243AA (SOT-89), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 3V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 350 V, Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V.
Weitere Produktangebote TN5335N8-G nach Preis ab 0.94 EUR bis 1.85 EUR
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TN5335N8-G | Hersteller : Microchip Technology |
 Description: MOSFET N-CH 350V 230MA TO243AAPackaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Tj) Rds On (Max) @ Id, Vgs: 15Ohm @ 200mA, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-243AA (SOT-89) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 350 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V |
auf Bestellung 1339 Stücke: Lieferzeit 10-14 Tag (e) |
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| TN5335N8-G | Hersteller : MICROCHIP TECHNOLOGY |
TN5335N8-G SMD N channel transistors |
auf Bestellung 897 Stücke: Lieferzeit 7-14 Tag (e) |
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TN5335N8-G | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 350V 0.23A 4-Pin(3+Tab) SOT-89 T/R |
Produkt ist nicht verfügbar |
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TN5335N8-G | Hersteller : Microchip Technology |
Description: MOSFET N-CH 350V 230MA TO243AA Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Tj) Rds On (Max) @ Id, Vgs: 15Ohm @ 200mA, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-243AA (SOT-89) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 350 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V |
Produkt ist nicht verfügbar |