TN5335N8-G Microchip Technology


TN5335B081213.pdf
Hersteller: Microchip Technology
MOSFETs 350V 15Ohm
auf Bestellung 1338 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+2.05 EUR
25+1.71 EUR
100+1.57 EUR
Mindestbestellmenge: 2 Stücke
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Technische Details TN5335N8-G Microchip Technology

Description: MOSFET N-CH 350V 230MA TO243AA, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 230mA (Tj), Rds On (Max) @ Id, Vgs: 15Ohm @ 200mA, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TO-243AA (SOT-89), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 3V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 350 V, Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V.

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Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
TN5335N8-G TN5335N8-G Microchip Technology TN5335-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005955A.pdf Description: MOSFET N-CH 350V 230MA TO243AA
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
Drain to Source Voltage (Vdss): 350 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Part Status: Active
Supplier Device Package: TO-243AA (SOT-89)
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 15Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
auf Bestellung 1339 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.2 EUR
25+1.83 EUR
100+1.68 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TN5335N8-G TN5335-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005955A.pdf
Hersteller: Microchip Technology
Description: MOSFET N-CH 350V 230MA TO243AA
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
Drain to Source Voltage (Vdss): 350 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Part Status: Active
Supplier Device Package: TO-243AA (SOT-89)
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 15Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
auf Bestellung 1339 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.2 EUR
25+1.83 EUR
100+1.68 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH