TN5335N8-G MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 230mA; Idm: 1.3A; 1.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.23A
Pulsed drain current: 1.3A
Power dissipation: 1.6W
Case: SOT89-3
Gate-source voltage: ±20V
On-state resistance: 15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 897 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 59+ | 1.22 EUR |
| 69+ | 1.04 EUR |
| 70+ | 1.03 EUR |
| 77+ | 0.93 EUR |
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Technische Details TN5335N8-G MICROCHIP TECHNOLOGY
Description: MOSFET N-CH 350V 230MA TO243AA, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 230mA (Tj), Rds On (Max) @ Id, Vgs: 15Ohm @ 200mA, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TO-243AA (SOT-89), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 3V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 350 V, Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V.
Weitere Produktangebote TN5335N8-G nach Preis ab 0.93 EUR bis 1.85 EUR
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TN5335N8-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 350V; 230mA; Idm: 1.3A; 1.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 350V Drain current: 0.23A Pulsed drain current: 1.3A Power dissipation: 1.6W Case: SOT89-3 Gate-source voltage: ±20V On-state resistance: 15Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 897 Stücke: Lieferzeit 14-21 Tag (e) |
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TN5335N8-G | Hersteller : Microchip Technology |
MOSFETs 350V 15Ohm |
auf Bestellung 1338 Stücke: Lieferzeit 10-14 Tag (e) |
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TN5335N8-G | Hersteller : Microchip Technology |
Description: MOSFET N-CH 350V 230MA TO243AA Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Tj) Rds On (Max) @ Id, Vgs: 15Ohm @ 200mA, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-243AA (SOT-89) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 350 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V |
auf Bestellung 1339 Stücke: Lieferzeit 10-14 Tag (e) |
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TN5335N8-G | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 350V 0.23A 4-Pin(3+Tab) SOT-89 T/R |
Produkt ist nicht verfügbar |
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TN5335N8-G | Hersteller : Microchip Technology |
Description: MOSFET N-CH 350V 230MA TO243AA Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Tj) Rds On (Max) @ Id, Vgs: 15Ohm @ 200mA, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-243AA (SOT-89) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 350 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V |
Produkt ist nicht verfügbar |