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TN5335N8-G

TN5335N8-G MICROCHIP TECHNOLOGY

tn5335.pdf Hersteller: MICROCHIP TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.75A; 1.6W; SOT89-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Pulsed drain current: 0.75A
Power dissipation: 1.6W
Case: SOT89-3
Gate-source voltage: ±20V
On-state resistance: 15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 897 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
53+1.37 EUR
61+ 1.19 EUR
71+ 1.02 EUR
75+ 0.96 EUR
Mindestbestellmenge: 53
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Technische Details TN5335N8-G MICROCHIP TECHNOLOGY

Description: MOSFET N-CH 350V 230MA TO243AA, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 230mA (Tj), Rds On (Max) @ Id, Vgs: 15Ohm @ 200mA, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TO-243AA (SOT-89), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 3V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 350 V, Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V.

Weitere Produktangebote TN5335N8-G nach Preis ab 0.96 EUR bis 2.76 EUR

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TN5335N8-G TN5335N8-G Hersteller : MICROCHIP TECHNOLOGY tn5335.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.75A; 1.6W; SOT89-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Pulsed drain current: 0.75A
Power dissipation: 1.6W
Case: SOT89-3
Gate-source voltage: ±20V
On-state resistance: 15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 897 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
53+1.37 EUR
61+ 1.19 EUR
71+ 1.02 EUR
75+ 0.96 EUR
Mindestbestellmenge: 53
TN5335N8-G TN5335N8-G Hersteller : Microchip Technology TN5335-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005955A.pdf Description: MOSFET N-CH 350V 230MA TO243AA
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
Rds On (Max) @ Id, Vgs: 15Ohm @ 200mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
auf Bestellung 1489 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.85 EUR
100+ 1.77 EUR
Mindestbestellmenge: 10
TN5335N8-G TN5335N8-G Hersteller : Microchip Technology TN5335_N_Channel_Enhancement_Mode_Vertical_DMOS_FE-2578781.pdf MOSFET 350V 15Ohm
auf Bestellung 1623 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
19+2.76 EUR
25+ 2.3 EUR
100+ 2.1 EUR
1000+ 2.09 EUR
4000+ 2.08 EUR
Mindestbestellmenge: 19
TN5335N8-G TN5335N8-G Hersteller : Microchip Technology TN5335-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005955A.pdf Description: MOSFET N-CH 350V 230MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
Rds On (Max) @ Id, Vgs: 15Ohm @ 200mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
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