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TO220FMDD4N65F

TO220FMDD4N65F NextGen Components


TO220FMDD4N65F.pdf Hersteller: NextGen Components
Description: MOSFET TO-220F N 650V 4A
Packaging: Tube
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
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Technische Details TO220FMDD4N65F NextGen Components

Description: MOSFET TO-220F N 650V 4A, Packaging: Tube, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V.