TP0606N3-G-P002 Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET P-CH 60V 320MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Tj)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
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Technische Details TP0606N3-G-P002 Microchip Technology
Description: MOSFET P-CH 60V 320MA TO92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 320mA (Tj), Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 1mA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V.
Weitere Produktangebote TP0606N3-G-P002
| Foto | Bezeichnung | Hersteller | Beschreibung |
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TP0606N3-G-P002 | Hersteller : Microchip Technology |
MOSFETs P-CH Enhancmnt Mode MOSFET |
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| TP0606N3-G-P002 | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -320mA; Idm: -3.5A; 1W; TO92 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -320mA Pulsed drain current: -3.5A Power dissipation: 1W Case: TO92 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: THT Kind of package: tape Kind of channel: enhancement |
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