TP0610K-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 185MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 185mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.25 EUR |
| 6000+ | 0.23 EUR |
| 9000+ | 0.22 EUR |
| 15000+ | 0.21 EUR |
| 21000+ | 0.2 EUR |
| 30000+ | 0.19 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TP0610K-T1-E3 Vishay Siliconix
Description: MOSFET P-CH 60V 185MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 185mA (Ta), Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V.
Weitere Produktangebote TP0610K-T1-E3 nach Preis ab 0.2 EUR bis 1.07 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TP0610K-T1-E3 | Vishay Semiconductors |
MOSFETs -60V Vds 20V Vgs SOT-23 |
auf Bestellung 278287 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
TP0610K-T1-E3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 185MA SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 15 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 185mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 542861 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TP0610K-T1-E3 |
|
Hersteller: Vishay Semiconductors
MOSFETs -60V Vds 20V Vgs SOT-23
MOSFETs -60V Vds 20V Vgs SOT-23
auf Bestellung 278287 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.53 EUR |
| 10+ | 0.31 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.25 EUR |
| 6000+ | 0.2 EUR |
| TP0610K-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 185MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 15 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 185mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 60V 185MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 15 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 185mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 542861 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 17+ | 1.07 EUR |
| 27+ | 0.67 EUR |
| 100+ | 0.43 EUR |
| 500+ | 0.33 EUR |
| 1000+ | 0.29 EUR |