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TP2104N3-G-P003

TP2104N3-G-P003 Microchip Technology


TP2104-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005958A.pdf Hersteller: Microchip Technology
Description: MOSFET P-CH 40V 175MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
auf Bestellung 8005 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+1.05 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TP2104N3-G-P003 Microchip Technology

Description: MOSFET P-CH 40V 175MA TO92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 175mA (Tj), Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V, Power Dissipation (Max): 740mW (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TO-92-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V.

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TP2104N3-G-P003 TP2104N3-G-P003 Hersteller : Microchip Technology TP2104-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005958A.pdf Description: MOSFET P-CH 40V 175MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
auf Bestellung 9400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.37 EUR
25+1.16 EUR
100+1.05 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
TP2104N3-G-P003 TP2104N3-G-P003 Hersteller : Microchip Technology TP2104_P_Channel_Enhancement_Mode_Vertical_DMOS_FE-3442276.pdf MOSFETs P-CH Enhancmnt Mode MOSFET
auf Bestellung 2271 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.49 EUR
25+1.25 EUR
100+1.14 EUR
1000+1.07 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH