TP2435N8-G Microchip Technology
Hersteller: Microchip Technology
Description: MOSFET P-CH 350V 231MA TO243AA
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Drain to Source Voltage (Vdss): 350 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Supplier Device Package: TO-243AA (SOT-89)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 15Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 231mA (Tj)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details TP2435N8-G Microchip Technology
Description: MOSFET P-CH 350V 231MA TO243AA, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V, Drain to Source Voltage (Vdss): 350 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 3V, 10V, Supplier Device Package: TO-243AA (SOT-89), Vgs(th) (Max) @ Id: 2.4V @ 1mA, Power Dissipation (Max): 1.6W (Ta), Rds On (Max) @ Id, Vgs: 15Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 231mA (Tj), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote TP2435N8-G nach Preis ab 2.11 EUR bis 3.01 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TP2435N8-G | Microchip Technology |
MOSFETs 350V 15Ohm |
auf Bestellung 1401 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
|
|
TP2435N8-G | Microchip Technology |
Description: MOSFET P-CH 350V 231MA TO243AA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V Drain to Source Voltage (Vdss): 350 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Supplier Device Package: TO-243AA (SOT-89) Vgs(th) (Max) @ Id: 2.4V @ 1mA Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 15Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 231mA (Tj) FET Type: P-Channel Technology: MOSFET (Metal Oxide) |
auf Bestellung 3838 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
| TP2435N8-G |
|
auf Bestellung 83 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| TP2435N8-G |
|
Hersteller: Microchip Technology
MOSFETs 350V 15Ohm
MOSFETs 350V 15Ohm
auf Bestellung 1401 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.8 EUR |
| 25+ | 2.32 EUR |
| 100+ | 2.11 EUR |
| TP2435N8-G |
|
Hersteller: Microchip Technology
Description: MOSFET P-CH 350V 231MA TO243AA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Drain to Source Voltage (Vdss): 350 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Supplier Device Package: TO-243AA (SOT-89)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 15Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 231mA (Tj)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET P-CH 350V 231MA TO243AA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Drain to Source Voltage (Vdss): 350 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Supplier Device Package: TO-243AA (SOT-89)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 15Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 231mA (Tj)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 3838 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.01 EUR |
| 25+ | 2.5 EUR |
| 100+ | 2.26 EUR |