TP2510N8-G MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGYCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1.5A; 1.6W; SOT89-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Pulsed drain current: -1.5A
Power dissipation: 1.6W
Case: SOT89-3
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 524 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 40+ | 1.82 EUR |
| 44+ | 1.63 EUR |
| 56+ | 1.29 EUR |
| 61+ | 1.17 EUR |
| 65+ | 1.12 EUR |
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Technische Details TP2510N8-G MICROCHIP TECHNOLOGY
Description: MOSFET P-CH 100V 480MA TO243AA, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 480mA (Tj), Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 2.4V @ 1mA, Supplier Device Package: TO-243AA (SOT-89), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V.
Weitere Produktangebote TP2510N8-G nach Preis ab 1.12 EUR bis 3.72 EUR
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TP2510N8-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -1.5A; 1.6W; SOT89-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Pulsed drain current: -1.5A Power dissipation: 1.6W Case: SOT89-3 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of channel: enhanced |
auf Bestellung 524 Stücke: Lieferzeit 14-21 Tag (e) |
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TP2510N8-G | Hersteller : Microchip Technology |
Description: MOSFET P-CH 100V 480MA TO243AA Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 480mA (Tj) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: TO-243AA (SOT-89) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V |
auf Bestellung 14000 Stücke: Lieferzeit 10-14 Tag (e) |
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TP2510N8-G | Hersteller : Microchip Technology |
Trans MOSFET P-CH Si 100V 0.48A 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 54000 Stücke: Lieferzeit 14-21 Tag (e) |
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TP2510N8-G | Hersteller : Microchip Technology |
Description: MOSFET P-CH 100V 480MA TO243AA Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 480mA (Tj) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: TO-243AA (SOT-89) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V |
auf Bestellung 17213 Stücke: Lieferzeit 10-14 Tag (e) |
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TP2510N8-G | Hersteller : Microchip Technology |
MOSFET 100V 3.5Ohm |
auf Bestellung 7813 Stücke: Lieferzeit 14-28 Tag (e) |
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TP2510N8-G | Hersteller : Microchip Technology |
Trans MOSFET P-CH Si 100V 0.48A 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 52000 Stücke: Lieferzeit 14-21 Tag (e) |
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| TP2510N8-G | Hersteller : Microchip |
P-MOSFET 100V 480mA 3.5mΩ 1.6W TP2510N8-G Microchip Tech TTP2510n8 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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TP2510N8-G | Hersteller : Microchip Technology |
Trans MOSFET P-CH Si 100V 0.48A 4-Pin(3+Tab) SOT-89 T/R |
Produkt ist nicht verfügbar |
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TP2510N8-G | Hersteller : Microchip Technology |
Trans MOSFET P-CH Si 100V 0.48A 4-Pin(3+Tab) SOT-89 T/R |
Produkt ist nicht verfügbar |