TP2520N8-G Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET P-CH 200V 260MA TO243AA
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 1892 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 4.08 EUR |
| 25+ | 3.43 EUR |
| 100+ | 3.1 EUR |
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Technische Details TP2520N8-G Microchip Technology
Description: MOSFET P-CH 200V 260MA TO243AA, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 260mA (Tj), Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 2.4V @ 1mA, Supplier Device Package: TO-243AA (SOT-89), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V.
Weitere Produktangebote TP2520N8-G nach Preis ab 3.12 EUR bis 4.11 EUR
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TP2520N8-G | Hersteller : Microchip Technology |
MOSFET 200V 12Ohm |
auf Bestellung 5565 Stücke: Lieferzeit 14-28 Tag (e) |
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TP2520N8-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -0.75A; 1.6W; SOT89-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Pulsed drain current: -0.75A Power dissipation: 1.6W Case: SOT89-3 Gate-source voltage: ±20V On-state resistance: 12Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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TP2520N8-G | Hersteller : Microchip Technology |
Description: MOSFET P-CH 200V 260MA TO243AA Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Tj) Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: TO-243AA (SOT-89) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V |
Produkt ist nicht verfügbar |
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TP2520N8-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -0.75A; 1.6W; SOT89-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Pulsed drain current: -0.75A Power dissipation: 1.6W Case: SOT89-3 Gate-source voltage: ±20V On-state resistance: 12Ω Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |