TP2535N3-G Microchip Technology
| Anzahl | Privatkunde |
|---|---|
| 149+ | 1.2 EUR |
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Technische Details TP2535N3-G Microchip Technology
Description: MOSFET P-CH 350V 86MA TO92-3, Packaging: Bag, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 86mA (Tj), Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V, Power Dissipation (Max): 740mW (Ta), Vgs(th) (Max) @ Id: 2.4V @ 1mA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 350 V, Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V.
Weitere Produktangebote TP2535N3-G nach Preis ab 2.18 EUR bis 3.58 EUR
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TP2535N3-G | Microchip Technology |
 Description: MOSFET P-CH 350V 86MA TO92-3Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 86mA (Tj) Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 350 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V |
auf Bestellung 673 Stücke: Lieferzeit 10-14 Tag (e) |
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TP2535N3-G | Microchip Technology |
MOSFETs 350V 25Ohm |
auf Bestellung 1301 Stücke: Lieferzeit 10-14 Tag (e) |
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TP2535N3-G | Microchip Technology |
Trans MOSFET P-CH Si 350V 0.086A 3-Pin TO-92 Bag |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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TP2535N3-G | MICROCHIP TECHNOLOGY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -350V; -86mA; Idm: -0.6A; 740mW Manufacturer standard package: 1000pcs. Pulsed drain current: -0.6A Power dissipation: 0.74W Polarisation: unipolar Drain current: -86mA Kind of channel: enhancement Drain-source voltage: -350V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: bulk Case: TO92 On-state resistance: 25Ω Mounting: THT |
auf Bestellung 281 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| TP2535N3-G |
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Hersteller: Microchip Technology
Description: MOSFET P-CH 350V 86MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 86mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
Description: MOSFET P-CH 350V 86MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 86mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 673 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.27 EUR |
| 25+ | 2.73 EUR |
| 100+ | 2.46 EUR |
| TP2535N3-G |
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Hersteller: Microchip Technology
MOSFETs 350V 25Ohm
MOSFETs 350V 25Ohm
auf Bestellung 1301 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.28 EUR |
| 25+ | 2.75 EUR |
| 100+ | 2.48 EUR |
| 500+ | 2.23 EUR |
| 1000+ | 2.18 EUR |
| TP2535N3-G |
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Hersteller: Microchip Technology
Trans MOSFET P-CH Si 350V 0.086A 3-Pin TO-92 Bag
Trans MOSFET P-CH Si 350V 0.086A 3-Pin TO-92 Bag
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 3.58 EUR |
| TP2535N3-G |
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Hersteller: MICROCHIP TECHNOLOGY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -350V; -86mA; Idm: -0.6A; 740mW
Manufacturer standard package: 1000pcs.
Pulsed drain current: -0.6A
Power dissipation: 0.74W
Polarisation: unipolar
Drain current: -86mA
Kind of channel: enhancement
Drain-source voltage: -350V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: bulk
Case: TO92
On-state resistance: 25Ω
Mounting: THT
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -350V; -86mA; Idm: -0.6A; 740mW
Manufacturer standard package: 1000pcs.
Pulsed drain current: -0.6A
Power dissipation: 0.74W
Polarisation: unipolar
Drain current: -86mA
Kind of channel: enhancement
Drain-source voltage: -350V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: bulk
Case: TO92
On-state resistance: 25Ω
Mounting: THT
auf Bestellung 281 Stücke:
Lieferzeit 14-21 Tag (e)