TP2540N3-G

TP2540N3-G Microchip Technology


TP2540-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006371A.pdf Hersteller: Microchip Technology
Description: MOSFET P-CH 400V 86MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 86mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 1033 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.85 EUR
25+ 2.39 EUR
100+ 2.17 EUR
Mindestbestellmenge: 7
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Technische Details TP2540N3-G Microchip Technology

Description: MOSFET P-CH 400V 86MA TO92-3, Packaging: Bag, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 86mA (Tj), Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V, Power Dissipation (Max): 740mW (Ta), Vgs(th) (Max) @ Id: 2.4V @ 1mA, Supplier Device Package: TO-92-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 400 V, Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V.

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TP2540N3-G TP2540N3-G Hersteller : Microchip Technology TP2540_P_Channel_Enhancement_Mode_Vertical_DMOS_FE-1863798.pdf MOSFET 400V 25Ohm
auf Bestellung 1505 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+2.92 EUR
25+ 2.45 EUR
100+ 2.22 EUR