auf Bestellung 755 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.03 EUR |
| 25+ | 2.52 EUR |
| 100+ | 2.29 EUR |
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Technische Details TP2635N3-G Microchip Technology
Description: MOSFET P-CH 350V 180MA TO92-3, Packaging: Bag, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 180mA (Tj), Rds On (Max) @ Id, Vgs: 15Ohm @ 300mA, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TO-92-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 350 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V.
Weitere Produktangebote TP2635N3-G nach Preis ab 2.53 EUR bis 3.34 EUR
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TP2635N3-G | Hersteller : Microchip Technology |
 Description: MOSFET P-CH 350V 180MA TO92-3Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 180mA (Tj) Rds On (Max) @ Id, Vgs: 15Ohm @ 300mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 350 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
auf Bestellung 344 Stücke: Lieferzeit 10-14 Tag (e) |
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TP2635N3-G | Hersteller : Microchip Technology |
Trans MOSFET P-CH Si 350V 0.18A 3-Pin TO-92 Bag |
Produkt ist nicht verfügbar |
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TP2635N3-G | Hersteller : Microchip Technology |
Trans MOSFET P-CH Si 350V 0.18A 3-Pin TO-92 Bag |
Produkt ist nicht verfügbar |