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TP2635N3-G Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET P-CH 350V 180MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Tj)
Rds On (Max) @ Id, Vgs: 15Ohm @ 300mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
auf Bestellung 832 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 3.52 EUR |
| 100+ | 3.32 EUR |
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Technische Details TP2635N3-G Microchip Technology
Description: MOSFET P-CH 350V 180MA TO92-3, Packaging: Bag, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 180mA (Tj), Rds On (Max) @ Id, Vgs: 15Ohm @ 300mA, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TO-92-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 350 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V.
Weitere Produktangebote TP2635N3-G nach Preis ab 3.48 EUR bis 4.84 EUR
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TP2635N3-G | Hersteller : Microchip Technology |
MOSFET 350V 15Ohm |
auf Bestellung 919 Stücke: Lieferzeit 14-28 Tag (e) |
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TP2635N3-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -350V; -0.7A; 1W; TO92 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -350V Pulsed drain current: -0.7A Power dissipation: 1W Case: TO92 Gate-source voltage: ±20V On-state resistance: 15Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced Anzahl je Verpackung: 1000 Stücke |
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TP2635N3-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -350V; -0.7A; 1W; TO92 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -350V Pulsed drain current: -0.7A Power dissipation: 1W Case: TO92 Gate-source voltage: ±20V On-state resistance: 15Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced |
Produkt ist nicht verfügbar |