
auf Bestellung 880 Stücke:
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Anzahl | Preis |
---|---|
1+ | 3.34 EUR |
25+ | 2.31 EUR |
100+ | 2.27 EUR |
1000+ | 2.25 EUR |
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Technische Details TP2635N3-G Microchip Technology
Description: MOSFET P-CH 350V 180MA TO92-3, Packaging: Bag, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 180mA (Tj), Rds On (Max) @ Id, Vgs: 15Ohm @ 300mA, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TO-92-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 350 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V.
Weitere Produktangebote TP2635N3-G nach Preis ab 2.53 EUR bis 3.34 EUR
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TP2635N3-G | Hersteller : Microchip Technology |
![]() Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 180mA (Tj) Rds On (Max) @ Id, Vgs: 15Ohm @ 300mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 350 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
auf Bestellung 344 Stücke: Lieferzeit 10-14 Tag (e) |
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TP2635N3-G | Hersteller : Microchip Technology |
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TP2635N3-G | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Transistor: P-MOSFET; unipolar; -350V; -180mA; Idm: -8A; 1W; TO92 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -350V Drain current: -180mA Pulsed drain current: -8A Power dissipation: 1W Case: TO92 Gate-source voltage: ±20V On-state resistance: 15Ω Mounting: THT Kind of package: bulk Kind of channel: enhancement |
Produkt ist nicht verfügbar |