TP44400SG Tagore Technology
Hersteller: Tagore TechnologyDescription: GAN FET HEMT 650V .36OHM 22QFN
Packaging: Cut Tape (CT)
Package / Case: 22-PowerVFQFN
Mounting Type: Surface Mount
Configuration: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 500mA, 6V
Vgs(th) (Max) @ Id: 2.5V @ 2.8mA
Supplier Device Package: 22-QFN (5x7)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 6V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Voltage - Rated: 650 V
Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 400 V
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 3.41 EUR |
| 10+ | 2.95 EUR |
| 100+ | 2.55 EUR |
| 500+ | 2.05 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TP44400SG Tagore Technology
Description: GAN FET HEMT 650V .36OHM 22QFN, Packaging: Tape & Reel (TR), Package / Case: 22-PowerVFQFN, Mounting Type: Surface Mount, Configuration: P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 500mA, 6V, Vgs(th) (Max) @ Id: 2.5V @ 2.8mA, Supplier Device Package: 22-QFN (5x7), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 0V, 6V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Voltage - Rated: 650 V, Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 400 V.
Weitere Produktangebote TP44400SG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
|
|
TP44400SG | Hersteller : Tagore Technology |
Description: GAN FET HEMT 650V .36OHM 22QFN Packaging: Tape & Reel (TR) Package / Case: 22-PowerVFQFN Mounting Type: Surface Mount Configuration: P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 500mA, 6V Vgs(th) (Max) @ Id: 2.5V @ 2.8mA Supplier Device Package: 22-QFN (5x7) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V, 6V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Voltage - Rated: 650 V Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 400 V |
Produkt ist nicht verfügbar |