TP5335K1-G Microchip Technology


TP5335-Data-Sheet-20005704D.pdf
Hersteller: Microchip Technology
Description: MOSFET P-CH 350V 85MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85mA (Tj)
Rds On (Max) @ Id, Vgs: 30Ohm @ 200mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-236AB (SOT23)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
auf Bestellung 9000 Stücke:

Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.74 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TP5335K1-G Microchip Technology

Description: MOSFET P-CH 350V 85MA TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 85mA (Tj), Rds On (Max) @ Id, Vgs: 30Ohm @ 200mA, 10V, Power Dissipation (Max): 360mW (Ta), Vgs(th) (Max) @ Id: 2.4V @ 1mA, Supplier Device Package: TO-236AB (SOT23), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 350 V, Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V.

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TP5335K1-G TP5335K1-G Microchip Technology TP5335-Data-Sheet-20005704D.pdf Description: MOSFET P-CH 350V 85MA TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
Drain to Source Voltage (Vdss): 350 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB (SOT23)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 30Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 85mA (Tj)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 10763 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.97 EUR
25+0.82 EUR
100+0.81 EUR
Mindestbestellmenge: 19 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TP5335K1-G TP5335K1-G Microchip Technology TP5335_Data_Sheet_20005704D-2935446.pdf MOSFET 350V 25Ohm
auf Bestellung 20695 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.03 EUR
25+0.87 EUR
100+0.78 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TP5335K1-G TP5335-Data-Sheet-20005704D.pdf
Hersteller: Microchip Technology
Description: MOSFET P-CH 350V 85MA TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
Drain to Source Voltage (Vdss): 350 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB (SOT23)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 30Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 85mA (Tj)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 10763 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
19+0.97 EUR
25+0.82 EUR
100+0.81 EUR
Mindestbestellmenge: 19 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TP5335K1-G TP5335_Data_Sheet_20005704D-2935446.pdf
Hersteller: Microchip Technology
MOSFET 350V 25Ohm
auf Bestellung 20695 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+1.03 EUR
25+0.87 EUR
100+0.78 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH