Technische Details TP5335K1-G Microchip Technology
Description: MOSFET P-CH 350V 85MA TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 85mA (Tj), Rds On (Max) @ Id, Vgs: 30Ohm @ 200mA, 10V, Power Dissipation (Max): 360mW (Ta), Vgs(th) (Max) @ Id: 2.4V @ 1mA, Supplier Device Package: TO-236AB (SOT23), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 350 V, Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V.
Weitere Produktangebote TP5335K1-G nach Preis ab 0.8 EUR bis 1.23 EUR
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TP5335K1-G | Microchip Technology |
 Description: MOSFET P-CH 350V 85MA TO236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 85mA (Tj) Rds On (Max) @ Id, Vgs: 30Ohm @ 200mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: TO-236AB (SOT23) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 350 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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TP5335K1-G | Microchip Technology |
Trans MOSFET P-CH Si 350V 0.085A 3-Pin SOT-23 T/R |
auf Bestellung 296 Stücke: Lieferzeit 14-21 Tag (e) |
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TP5335K1-G | Microchip Technology |
Trans MOSFET P-CH Si 350V 0.085A 3-Pin SOT-23 T/R |
auf Bestellung 296 Stücke: Lieferzeit 14-21 Tag (e) |
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TP5335K1-G | Microchip Technology |
Trans MOSFET P-CH Si 350V 0.085A 3-Pin SOT-23 T/R |
auf Bestellung 324000 Stücke: Lieferzeit 14-21 Tag (e) |
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TP5335K1-G | Microchip Technology |
Trans MOSFET P-CH Si 350V 0.085A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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TP5335K1-G | Microchip Technology |
Description: MOSFET P-CH 350V 85MA TO236AB Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V Drain to Source Voltage (Vdss): 350 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-236AB (SOT23) Vgs(th) (Max) @ Id: 2.4V @ 1mA Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 30Ohm @ 200mA, 10V Current - Continuous Drain (Id) @ 25°C: 85mA (Tj) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 10763 Stücke: Lieferzeit 10-14 Tag (e) |
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TP5335K1-G | Microchip Technology |
MOSFET 350V 25Ohm |
auf Bestellung 20695 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: Microchip Technology
Description: MOSFET P-CH 350V 85MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85mA (Tj)
Rds On (Max) @ Id, Vgs: 30Ohm @ 200mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-236AB (SOT23)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
Description: MOSFET P-CH 350V 85MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85mA (Tj)
Rds On (Max) @ Id, Vgs: 30Ohm @ 200mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-236AB (SOT23)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.88 EUR |
| TP5335K1-G |
|
Hersteller: Microchip Technology
Trans MOSFET P-CH Si 350V 0.085A 3-Pin SOT-23 T/R
Trans MOSFET P-CH Si 350V 0.085A 3-Pin SOT-23 T/R
auf Bestellung 296 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 180+ | 0.98 EUR |
| 183+ | 0.95 EUR |
| 187+ | 0.9 EUR |
| 250+ | 0.87 EUR |
| TP5335K1-G |
|
Hersteller: Microchip Technology
Trans MOSFET P-CH Si 350V 0.085A 3-Pin SOT-23 T/R
Trans MOSFET P-CH Si 350V 0.085A 3-Pin SOT-23 T/R
auf Bestellung 296 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 179+ | 0.99 EUR |
| 180+ | 0.94 EUR |
| 183+ | 0.89 EUR |
| 187+ | 0.84 EUR |
| 250+ | 0.8 EUR |
| TP5335K1-G |
|
Hersteller: Microchip Technology
Trans MOSFET P-CH Si 350V 0.085A 3-Pin SOT-23 T/R
Trans MOSFET P-CH Si 350V 0.085A 3-Pin SOT-23 T/R
auf Bestellung 324000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1 EUR |
| TP5335K1-G |
|
Hersteller: Microchip Technology
Trans MOSFET P-CH Si 350V 0.085A 3-Pin SOT-23 T/R
Trans MOSFET P-CH Si 350V 0.085A 3-Pin SOT-23 T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 500+ | 1.04 EUR |
| 1000+ | 1.01 EUR |
| 3000+ | 0.93 EUR |
| TP5335K1-G |
|
Hersteller: Microchip Technology
Description: MOSFET P-CH 350V 85MA TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
Drain to Source Voltage (Vdss): 350 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB (SOT23)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 30Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 85mA (Tj)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 350V 85MA TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
Drain to Source Voltage (Vdss): 350 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB (SOT23)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 30Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 85mA (Tj)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 10763 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 1.15 EUR |
| 25+ | 0.98 EUR |
| 100+ | 0.96 EUR |
| TP5335K1-G |
|
Hersteller: Microchip Technology
MOSFET 350V 25Ohm
MOSFET 350V 25Ohm
auf Bestellung 20695 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.23 EUR |
| 25+ | 1.04 EUR |
| 100+ | 0.93 EUR |