TP65H015G5WS Transphorm
Hersteller: TransphormDescription: 650 V 95 A GAN FET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 60A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 2mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5218 pF @ 400 V
auf Bestellung 593 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 52.36 EUR |
| 30+ | 41.51 EUR |
| 120+ | 39.19 EUR |
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Technische Details TP65H015G5WS Transphorm
Description: 650 V 95 A GAN FET, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 93A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 60A, 10V, Power Dissipation (Max): 266W (Tc), Vgs(th) (Max) @ Id: 4.8V @ 2mA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5218 pF @ 400 V.
Weitere Produktangebote TP65H015G5WS nach Preis ab 35.22 EUR bis 53.86 EUR
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TP65H015G5WS | Hersteller : Transphorm |
GaN FETs GAN FET 650V 95A TO2 47 |
auf Bestellung 711 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H015G5WS | Hersteller : RENESAS |
Description: RENESAS - TP65H015G5WS - Galliumnitrid (GaN)-Transistor, 650 V, 95 A, 0.018 ohm, 74 nC, TO-247, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 95A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 74nC Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: SuperGaN Series productTraceability: No Drain-Source-Durchgangswiderstand: 0.018ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 280 Stücke: Lieferzeit 14-21 Tag (e) |