| Anzahl | Privatkunde |
|---|---|
| 1+ | 39.77 EUR |
| 10+ | 27.64 EUR |
| 100+ | 24.17 EUR |
| 500+ | 24.03 EUR |
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Technische Details TP65H015G5WS Renesas Electronics
Description: 650 V 95 A GAN FET, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 93A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 60A, 10V, Power Dissipation (Max): 266W (Tc), Vgs(th) (Max) @ Id: 4.8V @ 2mA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5218 pF @ 400 V.
Weitere Produktangebote TP65H015G5WS nach Preis ab 18.68 EUR bis 43.35 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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TP65H015G5WS | Renesas Electronics Corporation |
 Description: 650 V 95 A GAN FETPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 93A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 60A, 10V Power Dissipation (Max): 266W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 2mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5218 pF @ 400 V |
auf Bestellung 307 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H015G5WS | RENESAS |
Description: RENESAS - TP65H015G5WS - Galliumnitrid (GaN)-Transistor, 650 V, 95 A, 0.018 ohm, 74 nC, TO-247, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 95A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Ladung, typ.: 74nC SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: SuperGaN Series productTraceability: No usEccn: EAR99 Drain-Source-Durchgangswiderstand: 0.018ohm |
auf Bestellung 343 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| TP65H015G5WS | Renesas |
Trans MOSFET N-CH GaN 650V 46.5A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 751 Stücke: Lieferzeit 14-21 Tag (e) |
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| TP65H015G5WS | Renesas |
Trans MOSFET N-CH GaN 650V 46.5A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 751 Stücke: Lieferzeit 14-21 Tag (e) |
|
| TP65H015G5WS |
|
Hersteller: Renesas Electronics Corporation
Description: 650 V 95 A GAN FET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 60A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 2mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5218 pF @ 400 V
Description: 650 V 95 A GAN FET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 60A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 2mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5218 pF @ 400 V
auf Bestellung 307 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 43.35 EUR |
| 30+ | 27.52 EUR |
| 120+ | 24.06 EUR |
| TP65H015G5WS |
|
Hersteller: RENESAS
Description: RENESAS - TP65H015G5WS - Galliumnitrid (GaN)-Transistor, 650 V, 95 A, 0.018 ohm, 74 nC, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 95A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 74nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.018ohm
Description: RENESAS - TP65H015G5WS - Galliumnitrid (GaN)-Transistor, 650 V, 95 A, 0.018 ohm, 74 nC, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 95A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 74nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.018ohm
auf Bestellung 343 Stücke:
Lieferzeit 14-21 Tag (e)
| TP65H015G5WS |
|
Hersteller: Renesas
Trans MOSFET N-CH GaN 650V 46.5A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH GaN 650V 46.5A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 751 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 37.19 EUR |
| 10+ | 24.22 EUR |
| 25+ | 23.45 EUR |
| 100+ | 20.96 EUR |
| 500+ | 20.23 EUR |
| TP65H015G5WS |
|
Hersteller: Renesas
Trans MOSFET N-CH GaN 650V 46.5A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH GaN 650V 46.5A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 751 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 37.19 EUR |
| 10+ | 23.69 EUR |
| 25+ | 22.59 EUR |
| 100+ | 19.84 EUR |
| 500+ | 18.68 EUR |