Technische Details TP65H030G4PQS-TR Renesas Electronics
Description: GANFET N-CH 650V 55.7A TOLL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Cascode Gallium Nitride FET), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55.7A (Tc), Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 12V, Power Dissipation (Max): 192W (Tc), Vgs(th) (Max) @ Id: 4.8V @ 1mA, Supplier Device Package: TOLL, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V.
Weitere Produktangebote TP65H030G4PQS-TR nach Preis ab 8.31 EUR bis 15.84 EUR
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TP65H030G4PQS-TR | Hersteller : Renesas Electronics Corporation |
 Description: GANFET N-CH 650V 55.7A TOLLPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Cascode Gallium Nitride FET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55.7A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 12V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 1mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V |
auf Bestellung 199 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H030G4PQS-TR | Hersteller : RENESAS |
Description: RENESAS - TP65H030G4PQS-TR - Galliumnitrid (GaN)-Transistor, 650 V, 55.7 A, 0.041 ohm, 24.5 nC, TOLL, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 55.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 24.5nC Bauform - Transistor: TOLL Anzahl der Pins: 9Pin(s) Produktpalette: SuperGaN Series productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.041ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 1960 Stücke: Lieferzeit 14-21 Tag (e) |
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TP65H030G4PQS-TR | Hersteller : RENESAS |
Description: RENESAS - TP65H030G4PQS-TR - Galliumnitrid (GaN)-Transistor, 650 V, 55.7 A, 0.041 ohm, 24.5 nC, TOLL, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 55.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 24.5nC Bauform - Transistor: TOLL Anzahl der Pins: 9Pin(s) Produktpalette: SuperGaN Series productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.041ohm |
auf Bestellung 1960 Stücke: Lieferzeit 14-21 Tag (e) |
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TP65H030G4PQS-TR | Hersteller : Renesas Electronics Corporation |
Description: GANFET N-CH 650V 55.7A TOLL Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Cascode Gallium Nitride FET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55.7A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 12V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 1mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V |
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