TP65H030G4PRS-TR Renesas Electronics
| Anzahl | Privatkunde |
|---|---|
| 1+ | 17.99 EUR |
| 10+ | 12.23 EUR |
| 100+ | 10.09 EUR |
| 500+ | 9.32 EUR |
| 1300+ | 8.79 EUR |
| 2600+ | 8.59 EUR |
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Technische Details TP65H030G4PRS-TR Renesas Electronics
Description: GANFET N-CH 650V 55.7A TOLT, Packaging: Tape & Reel (TR), Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Cascode Gallium Nitride FET), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55.7A (Tc), Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 12V, Power Dissipation (Max): 192W (Tc), Vgs(th) (Max) @ Id: 4.8V @ 1mA, Supplier Device Package: TOLT, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V.
Weitere Produktangebote TP65H030G4PRS-TR nach Preis ab 10.15 EUR bis 21.49 EUR
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TP65H030G4PRS-TR | Renesas Electronics Corporation |
 Description: GANFET N-CH 650V 55.7A TOLTPackaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Cascode Gallium Nitride FET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55.7A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 12V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 1mA Supplier Device Package: TOLT Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V |
auf Bestellung 592 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H030G4PRS-TR | RENESAS |
Description: RENESAS - TP65H030G4PRS-TR - Galliumnitrid (GaN)-Transistor, 650 V, 55.7 A, 0.041 ohm, 24.5 nC, TOLT, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 55.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Ladung, typ.: 24.5nC SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TOLT Anzahl der Pins: 16Pin(s) Produktpalette: SuperGaN Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Drain-Source-Durchgangswiderstand: 0.041ohm |
auf Bestellung 672 Stücke: Lieferzeit 14-21 Tag (e) |
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TP65H030G4PRS-TR | RENESAS |
Description: RENESAS - TP65H030G4PRS-TR - Galliumnitrid (GaN)-Transistor, 650 V, 55.7 A, 0.041 ohm, 24.5 nC, TOLT, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 55.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Gate-Ladung, typ.: 24.5nC SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TOLT Anzahl der Pins: 16Pin(s) Produktpalette: SuperGaN Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Drain-Source-Durchgangswiderstand: 0.041ohm |
auf Bestellung 672 Stücke: Lieferzeit 14-21 Tag (e) |
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| TP65H030G4PRS-TR |
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Hersteller: Renesas Electronics Corporation
Description: GANFET N-CH 650V 55.7A TOLT
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55.7A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 12V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: TOLT
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Description: GANFET N-CH 650V 55.7A TOLT
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55.7A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 12V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: TOLT
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
auf Bestellung 592 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 19.54 EUR |
| 10+ | 13.46 EUR |
| 100+ | 10.28 EUR |
| TP65H030G4PRS-TR |
|
Hersteller: RENESAS
Description: RENESAS - TP65H030G4PRS-TR - Galliumnitrid (GaN)-Transistor, 650 V, 55.7 A, 0.041 ohm, 24.5 nC, TOLT, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 55.7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 24.5nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TOLT
Anzahl der Pins: 16Pin(s)
Produktpalette: SuperGaN Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.041ohm
Description: RENESAS - TP65H030G4PRS-TR - Galliumnitrid (GaN)-Transistor, 650 V, 55.7 A, 0.041 ohm, 24.5 nC, TOLT, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 55.7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 24.5nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TOLT
Anzahl der Pins: 16Pin(s)
Produktpalette: SuperGaN Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.041ohm
auf Bestellung 672 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 21.49 EUR |
| 14+ | 16.87 EUR |
| 17+ | 12.7 EUR |
| 50+ | 11.54 EUR |
| 100+ | 10.36 EUR |
| 250+ | 10.15 EUR |
| TP65H030G4PRS-TR |
|
Hersteller: RENESAS
Description: RENESAS - TP65H030G4PRS-TR - Galliumnitrid (GaN)-Transistor, 650 V, 55.7 A, 0.041 ohm, 24.5 nC, TOLT, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 55.7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Gate-Ladung, typ.: 24.5nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TOLT
Anzahl der Pins: 16Pin(s)
Produktpalette: SuperGaN Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.041ohm
Description: RENESAS - TP65H030G4PRS-TR - Galliumnitrid (GaN)-Transistor, 650 V, 55.7 A, 0.041 ohm, 24.5 nC, TOLT, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 55.7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Gate-Ladung, typ.: 24.5nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TOLT
Anzahl der Pins: 16Pin(s)
Produktpalette: SuperGaN Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.041ohm
auf Bestellung 672 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 21.49 EUR |
| 14+ | 16.87 EUR |
| 17+ | 12.7 EUR |
| 50+ | 11.54 EUR |
| 100+ | 10.36 EUR |
| 250+ | 10.15 EUR |