TP65H030G4PRS-TR Renesas Electronics
| Anzahl | Preis |
|---|---|
| 1+ | 15.07 EUR |
| 10+ | 10.38 EUR |
| 100+ | 8.48 EUR |
| 1300+ | 7.22 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TP65H030G4PRS-TR Renesas Electronics
Description: GANFET N-CH 650V 55.7A TOLT, Packaging: Tape & Reel (TR), Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Cascode Gallium Nitride FET), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55.7A (Tc), Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 12V, Power Dissipation (Max): 192W (Tc), Vgs(th) (Max) @ Id: 4.8V @ 1mA, Supplier Device Package: TOLT, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V.
Weitere Produktangebote TP65H030G4PRS-TR nach Preis ab 8.38 EUR bis 15.93 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TP65H030G4PRS-TR | Hersteller : Renesas Electronics Corporation |
 Description: GANFET N-CH 650V 55.7A TOLTPackaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Cascode Gallium Nitride FET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55.7A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 12V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 1mA Supplier Device Package: TOLT Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V |
auf Bestellung 608 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
|
|
TP65H030G4PRS-TR | Hersteller : Renesas Electronics Corporation |
Description: GANFET N-CH 650V 55.7A TOLT Packaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Cascode Gallium Nitride FET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55.7A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 12V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 1mA Supplier Device Package: TOLT Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V |
Produkt ist nicht verfügbar |