TP65H030G4PWS Renesas Electronics
| Anzahl | Privatkunde |
|---|---|
| 1+ | 18.66 EUR |
| 10+ | 11.83 EUR |
| 100+ | 10.22 EUR |
| 500+ | 8.98 EUR |
| 960+ | 8.96 EUR |
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Technische Details TP65H030G4PWS Renesas Electronics
Description: GANFET N-CH 650V 55.7A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Cascode Gallium Nitride FET), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55.7A (Tc), Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 12V, Power Dissipation (Max): 192W (Tc), Vgs(th) (Max) @ Id: 4.8V @ 1mA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V.
Weitere Produktangebote TP65H030G4PWS nach Preis ab 7.7 EUR bis 20.31 EUR
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TP65H030G4PWS | Renesas Electronics Corporation |
 Description: GANFET N-CH 650V 55.7A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Cascode Gallium Nitride FET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55.7A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 12V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 1mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V |
auf Bestellung 1718 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H030G4PWS | RENESAS |
Description: RENESAS - TP65H030G4PWS - Galliumnitrid (GaN)-Transistor, 650 V, 55.7 A, 0.041 ohm, 24.5 nC, TO-247, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 55.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Ladung, typ.: 24.5nC SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: SuperGaN Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Drain-Source-Durchgangswiderstand: 0.041ohm |
auf Bestellung 665 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| TP65H030G4PWS | Renesas |
Trans MOSFET N-CH GaN 650V 55.7A 3-Pin(3+Tab) TO-247 T/R |
auf Bestellung 226 Stücke: Lieferzeit 14-21 Tag (e) |
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| TP65H030G4PWS | Renesas |
Trans MOSFET N-CH GaN 650V 55.7A 3-Pin(3+Tab) TO-247 T/R |
auf Bestellung 226 Stücke: Lieferzeit 14-21 Tag (e) |
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| TP65H030G4PWS |
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Hersteller: Renesas Electronics Corporation
Description: GANFET N-CH 650V 55.7A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55.7A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 12V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Description: GANFET N-CH 650V 55.7A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55.7A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 12V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
auf Bestellung 1718 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 20.31 EUR |
| 30+ | 12.07 EUR |
| 120+ | 10.26 EUR |
| 510+ | 8.94 EUR |
| 1020+ | 8.89 EUR |
| TP65H030G4PWS |
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Hersteller: RENESAS
Description: RENESAS - TP65H030G4PWS - Galliumnitrid (GaN)-Transistor, 650 V, 55.7 A, 0.041 ohm, 24.5 nC, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 55.7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 24.5nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.041ohm
Description: RENESAS - TP65H030G4PWS - Galliumnitrid (GaN)-Transistor, 650 V, 55.7 A, 0.041 ohm, 24.5 nC, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 55.7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 24.5nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.041ohm
auf Bestellung 665 Stücke:
Lieferzeit 14-21 Tag (e)
| TP65H030G4PWS |
|
Hersteller: Renesas
Trans MOSFET N-CH GaN 650V 55.7A 3-Pin(3+Tab) TO-247 T/R
Trans MOSFET N-CH GaN 650V 55.7A 3-Pin(3+Tab) TO-247 T/R
auf Bestellung 226 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 16.58 EUR |
| 17+ | 10.32 EUR |
| 25+ | 10 EUR |
| 100+ | 8.13 EUR |
| TP65H030G4PWS |
|
Hersteller: Renesas
Trans MOSFET N-CH GaN 650V 55.7A 3-Pin(3+Tab) TO-247 T/R
Trans MOSFET N-CH GaN 650V 55.7A 3-Pin(3+Tab) TO-247 T/R
auf Bestellung 226 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 16.58 EUR |
| 17+ | 10.09 EUR |
| 25+ | 9.63 EUR |
| 100+ | 7.7 EUR |