TP65H030G4PWS Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: GANFET N-CH 650V 55.7A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55.7A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 12V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
auf Bestellung 552 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 15.45 EUR |
| 10+ | 10.64 EUR |
| 240+ | 7.24 EUR |
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Technische Details TP65H030G4PWS Renesas Electronics Corporation
Description: GANFET N-CH 650V 55.7A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Cascode Gallium Nitride FET), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55.7A (Tc), Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 12V, Power Dissipation (Max): 192W (Tc), Vgs(th) (Max) @ Id: 4.8V @ 1mA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V.
Weitere Produktangebote TP65H030G4PWS nach Preis ab 8.11 EUR bis 15.68 EUR
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TP65H030G4PWS | Hersteller : Renesas Electronics |
GaN FETs 650V, 30mohm GaN FET in TO247-3L |
auf Bestellung 238 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H030G4PWS | Hersteller : RENESAS |
Description: RENESAS - TP65H030G4PWS - Galliumnitrid (GaN)-Transistor, 650 V, 55.7 A, 0.041 ohm, 24.5 nC, TO-247, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 55.7A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 24.5nC Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: SuperGaN Series productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.041ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 960 Stücke: Lieferzeit 14-21 Tag (e) |