auf Bestellung 329 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 29.36 EUR |
10+ | 25.87 EUR |
30+ | 25.48 EUR |
60+ | 24.69 EUR |
120+ | 22.35 EUR |
270+ | 21.98 EUR |
510+ | 20.26 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TP65H035G4WS Transphorm
Description: GANFET N-CH 650V 46.5A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C, Technology: GaNFET (Cascode Gallium Nitride FET), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc), Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 4.8V @ 1mA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 0 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V.
Weitere Produktangebote TP65H035G4WS
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
TP65H035G4WS | Hersteller : Transphorm |
Description: GANFET N-CH 650V 46.5A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C Technology: GaNFET (Cascode Gallium Nitride FET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 1mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 0 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V |
auf Bestellung 871 Stücke: Lieferzeit 10-14 Tag (e) |
||
TP65H035G4WS | Hersteller : TRANSPHORM |
Description: TRANSPHORM - TP65H035G4WS - Galliumnitrid (GaN)-Transistor, 650 V, 46 A, 0.041 ohm, 22 nC, TO-247, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 46A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 22nC Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: SuperGaN Series productTraceability: No Drain-Source-Durchgangswiderstand: 0.041ohm |
auf Bestellung 614 Stücke: Lieferzeit 14-21 Tag (e) |