TP65H035WS Transphorm
Hersteller: TransphormDescription: GANFET N-CH 650V 46.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
auf Bestellung 777 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 22.83 EUR |
| 30+ | 20.82 EUR |
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Technische Details TP65H035WS Transphorm
Description: GANFET N-CH 650V 46.5A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Cascode Gallium Nitride FET), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc), Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 4.8V @ 1mA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V.
Weitere Produktangebote TP65H035WS nach Preis ab 22.14 EUR bis 32.89 EUR
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TP65H035WS | Hersteller : Transphorm |
MOSFET 650V, 35mOhm |
auf Bestellung 775 Stücke: Lieferzeit 10-14 Tag (e) |
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