TP65H035WS Renesas Electronics

Description: GANFET N-CH 650V 46.5A TO247-3, Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc), FET Type: N-Channel, Technology: GaNFET (Cascode Gallium Nitride FET), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 12V, Part Status: Active, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 4.8V @ 1mA, Power Dissipation (Max): 156W (Tc).