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Technische Details TP65H050G4BS Transphorm
Description: 650 V 34 A GAN FET, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V, Power Dissipation (Max): 119W (Tc), Vgs(th) (Max) @ Id: 4.8V @ 700µA, Supplier Device Package: TO-263, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V.
Weitere Produktangebote TP65H050G4BS nach Preis ab 12.3 EUR bis 23 EUR
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TP65H050G4BS | Renesas Electronics Corporation |
 Description: 650 V 34 A GAN FETPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V Power Dissipation (Max): 119W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 700µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V |
auf Bestellung 213 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H050G4BS | RENESAS |
Description: RENESAS - TP65H050G4BS - Galliumnitrid (GaN)-Transistor, 650 V, 34 A, 0.06 ohm, 16 nC, TO-263, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 34A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 16nC Bauform - Transistor: TO-263 Anzahl der Pins: 3Pin(s) Produktpalette: SuperGaN Series productTraceability: No Drain-Source-Durchgangswiderstand: 0.06ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 134 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| TP65H050G4BS |
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Hersteller: Renesas Electronics Corporation
Description: 650 V 34 A GAN FET
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
Description: 650 V 34 A GAN FET
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
auf Bestellung 213 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 23 EUR |
| 50+ | 13.24 EUR |
| 100+ | 12.3 EUR |
| TP65H050G4BS |
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Hersteller: RENESAS
Description: RENESAS - TP65H050G4BS - Galliumnitrid (GaN)-Transistor, 650 V, 34 A, 0.06 ohm, 16 nC, TO-263, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 34A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 16nC
Bauform - Transistor: TO-263
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.06ohm
SVHC: No SVHC (25-Jun-2025)
Description: RENESAS - TP65H050G4BS - Galliumnitrid (GaN)-Transistor, 650 V, 34 A, 0.06 ohm, 16 nC, TO-263, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 34A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 16nC
Bauform - Transistor: TO-263
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.06ohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 134 Stücke:
Lieferzeit 14-21 Tag (e)