TP65H050G4YS Renesas Electronics
| Anzahl | Privatkunde |
|---|---|
| 1+ | 18.83 EUR |
| 10+ | 11.13 EUR |
| 100+ | 9.45 EUR |
| 500+ | 8.35 EUR |
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Technische Details TP65H050G4YS Renesas Electronics
Description: 650 V 35 A GAN FET HIGH VOLTAGE, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V, Power Dissipation (Max): 132W (Tc), Vgs(th) (Max) @ Id: 4.8V @ 700µA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V.
Weitere Produktangebote TP65H050G4YS nach Preis ab 8.19 EUR bis 24.04 EUR
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TP65H050G4YS | Renesas Electronics Corporation |
 Description: 650 V 35 A GAN FET HIGH VOLTAGEPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V Power Dissipation (Max): 132W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 700µA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V |
auf Bestellung 1276 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H050G4YS | RENESAS |
Description: RENESAS - TP65H050G4YS - Galliumnitrid (GaN)-Transistor, 650 V, 35 A, 0.06 ohm, 16 nC, TO-247, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 35A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Ladung, typ.: 16nC SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) Produktpalette: SuperGaN Series productTraceability: No usEccn: EAR99 Drain-Source-Durchgangswiderstand: 0.06ohm |
auf Bestellung 135 Stücke: Lieferzeit 14-21 Tag (e) |
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| TP65H050G4YS |
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Hersteller: Renesas Electronics Corporation
Description: 650 V 35 A GAN FET HIGH VOLTAGE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
Description: 650 V 35 A GAN FET HIGH VOLTAGE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
auf Bestellung 1276 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 19.18 EUR |
| 30+ | 11.33 EUR |
| 120+ | 9.6 EUR |
| 510+ | 8.34 EUR |
| 1020+ | 8.19 EUR |
| TP65H050G4YS |
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Hersteller: RENESAS
Description: RENESAS - TP65H050G4YS - Galliumnitrid (GaN)-Transistor, 650 V, 35 A, 0.06 ohm, 16 nC, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 35A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 16nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-247
Anzahl der Pins: 4Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.06ohm
Description: RENESAS - TP65H050G4YS - Galliumnitrid (GaN)-Transistor, 650 V, 35 A, 0.06 ohm, 16 nC, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 35A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 16nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-247
Anzahl der Pins: 4Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.06ohm
auf Bestellung 135 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 24.04 EUR |
| 12+ | 20.67 EUR |
| 13+ | 17.56 EUR |
| 50+ | 16.02 EUR |
| 100+ | 14.51 EUR |