TP65H050G4YS Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: 650 V 35 A GAN FET HIGH VOLTAGE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
| Anzahl | Preis |
|---|---|
| 2+ | 15.63 EUR |
| 30+ | 9.23 EUR |
| 120+ | 7.83 EUR |
| 510+ | 6.8 EUR |
| 1020+ | 6.68 EUR |
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Technische Details TP65H050G4YS Renesas Electronics Corporation
Description: 650 V 35 A GAN FET HIGH VOLTAGE, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V, Power Dissipation (Max): 132W (Tc), Vgs(th) (Max) @ Id: 4.8V @ 700µA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V.
Weitere Produktangebote TP65H050G4YS nach Preis ab 14.41 EUR bis 22.97 EUR
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TP65H050G4YS | Hersteller : Transphorm |
GaN FETs GaN FET 650 V 35A TO-247-4 |
auf Bestellung 364 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H050G4YS | Hersteller : RENESAS |
Description: RENESAS - TP65H050G4YS - Galliumnitrid (GaN)-Transistor, 650 V, 35 A, 0.06 ohm, 16 nC, TO-247, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 35A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 16nC Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) Produktpalette: SuperGaN Series productTraceability: No Drain-Source-Durchgangswiderstand: 0.06ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 293 Stücke: Lieferzeit 14-21 Tag (e) |