TP65H050WS Renesas Electronics Corporation

Description: GANFET N-CH 650V 34A TO247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 12V, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 4.8V @ 700µA, Power Dissipation (Max): 119W (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), FET Type: N-Channel, Technology: GaNFET (Cascode Gallium Nitride FET), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3.