auf Bestellung 320 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 29.34 EUR |
| 10+ | 28.05 EUR |
| 30+ | 19.45 EUR |
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Technische Details TP65H050WSQA Transphorm
Description: GANFET N-CH 650V 36A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: GaNFET (Cascode Gallium Nitride FET), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4.8V @ 700µA, Supplier Device Package: TO-247-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V, Qualification: AEC-Q101.
Weitere Produktangebote TP65H050WSQA nach Preis ab 29.64 EUR bis 29.64 EUR
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TP65H050WSQA | Hersteller : Transphorm |
 Description: GANFET N-CH 650V 36A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: GaNFET (Cascode Gallium Nitride FET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 700µA Supplier Device Package: TO-247-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V Qualification: AEC-Q101 |
auf Bestellung 21 Stücke: Lieferzeit 10-14 Tag (e) |
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