TP65H070G4LSG-TR Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: GANFET N-CH 650V 29A QFN8X8
Packaging: Cut Tape (CT)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: 3-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
| Anzahl | Preis |
|---|---|
| 2+ | 12.72 EUR |
| 10+ | 8.65 EUR |
| 100+ | 6.34 EUR |
| 500+ | 6.23 EUR |
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Technische Details TP65H070G4LSG-TR Renesas Electronics Corporation
Description: GANFET N-CH 650V 29A QFN8X8, Packaging: Tape & Reel (TR), Package / Case: 3-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V, Power Dissipation (Max): 96W (Tc), Vgs(th) (Max) @ Id: 4.8V @ 700µA, Supplier Device Package: 3-PQFN (8x8), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V.
Weitere Produktangebote TP65H070G4LSG-TR nach Preis ab 8.52 EUR bis 15.12 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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TP65H070G4LSG-TR | Transphorm |
GaN FETs GAN FET 650V 29A QFN8x8 |
auf Bestellung 2756 Stücke: Lieferzeit 10-14 Tag (e) |
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| TP65H070G4LSG-TR |
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Hersteller: Transphorm
GaN FETs GAN FET 650V 29A QFN8x8
GaN FETs GAN FET 650V 29A QFN8x8
auf Bestellung 2756 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 15.12 EUR |
| 10+ | 10.86 EUR |
| 100+ | 8.52 EUR |