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TP65H070G4LSG-TR

TP65H070G4LSG-TR Transphorm

TP65H070G4LSG_1v1-3244312.pdf Hersteller: Transphorm
MOSFET GAN FET 650V 29A QFN8x8
auf Bestellung 2822 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+15.75 EUR
10+ 13.48 EUR
25+ 12.25 EUR
100+ 11.25 EUR
250+ 10.6 EUR
500+ 9.93 EUR
1000+ 8.92 EUR
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Technische Details TP65H070G4LSG-TR Transphorm

Description: GANFET N-CH 650V 29A QFN8X8, Packaging: Tape & Reel (TR), Package / Case: 3-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V, Power Dissipation (Max): 96W (Tc), Vgs(th) (Max) @ Id: 4.8V @ 700µA, Supplier Device Package: 3-PQFN (8x8), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V.

Weitere Produktangebote TP65H070G4LSG-TR nach Preis ab 8.99 EUR bis 15.86 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TP65H070G4LSG-TR TP65H070G4LSG-TR Hersteller : Transphorm datasheet-tp65h070g4lsg Description: GANFET N-CH 650V 29A QFN8X8
Packaging: Cut Tape (CT)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: 3-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
auf Bestellung 2706 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+15.86 EUR
10+ 13.58 EUR
100+ 11.32 EUR
500+ 9.99 EUR
1000+ 8.99 EUR
Mindestbestellmenge: 2
TP65H070G4LSG-TR Hersteller : TRANSPHORM 4156851.pdf Description: TRANSPHORM - TP65H070G4LSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.085 ohm, 8.4 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 29A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 8.4nC
Bauform - Transistor: PQFN
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.085ohm
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H070G4LSG-TR TP65H070G4LSG-TR Hersteller : Transphorm datasheet-tp65h070g4lsg Description: GANFET N-CH 650V 29A QFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: 3-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
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