TP65H070G4LSGBEA-TR RENESAS
Hersteller: RENESAS
Description: RENESAS - TP65H070G4LSGBEA-TR - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.085 ohm, 11.9 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 29A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 11.9nC
Bauform - Transistor: PQFN
Anzahl der Pins: 8Pin(s)
Produktpalette: SuperGaN Series
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand: 0.085ohm
SVHC: No SVHC (25-Jun-2025)
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Technische Details TP65H070G4LSGBEA-TR RENESAS
Description: 650V, 70MOHM GAN FET IN 8X8 PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C, Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 12V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4.8V @ 500µA, Supplier Device Package: 8-PQFN (8x8), Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 588 pF @ 400 V.
Weitere Produktangebote TP65H070G4LSGBEA-TR
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TP65H070G4LSGBEA-TR | Hersteller : RENESAS |
Description: RENESAS - TP65H070G4LSGBEA-TR - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.085 ohm, 11.9 nC, PQFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 29A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 11.9nC Bauform - Transistor: PQFN Anzahl der Pins: 8Pin(s) Produktpalette: SuperGaN Series productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.085ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) |
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| TP65H070G4LSGBEA-TR | Hersteller : Renesas Electronics Corporation |
Description: 650V, 70MOHM GAN FET IN 8X8 PQFN Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 12V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 500µA Supplier Device Package: 8-PQFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 588 pF @ 400 V |
Produkt ist nicht verfügbar |
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| TP65H070G4LSGBEA-TR | Hersteller : Renesas Electronics Corporation |
Description: 650V, 70MOHM GAN FET IN 8X8 PQFN Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 12V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 500µA Supplier Device Package: 8-PQFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 588 pF @ 400 V |
Produkt ist nicht verfügbar |