TP65H070G4LSGBEA-TR Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: 650V, 70MOHM GAN FET IN 8X8 PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 12V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 500µA
Supplier Device Package: 8-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 588 pF @ 400 V
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Technische Details TP65H070G4LSGBEA-TR Renesas Electronics Corporation
Description: 650V, 70MOHM GAN FET IN 8X8 PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C, Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 12V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4.8V @ 500µA, Supplier Device Package: 8-PQFN (8x8), Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 588 pF @ 400 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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| TP65H070G4LSGBEA-TR | Hersteller : Renesas Electronics Corporation |
Description: 650V, 70MOHM GAN FET IN 8X8 PQFN Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 12V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 500µA Supplier Device Package: 8-PQFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 588 pF @ 400 V |
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