TP65H070G4PS Transphorm
Hersteller: TransphormDescription: GANFET N-CH 650V 29A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 700µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 638 pF @ 400 V
auf Bestellung 1085 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 14.06 EUR |
| 50+ | 11.23 EUR |
| 100+ | 10.05 EUR |
| 500+ | 8.86 EUR |
| 1000+ | 7.98 EUR |
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Technische Details TP65H070G4PS Transphorm
Description: GANFET N-CH 650V 29A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V, Power Dissipation (Max): 96W (Tc), Vgs(th) (Max) @ Id: 4.7V @ 700µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 638 pF @ 400 V.
Weitere Produktangebote TP65H070G4PS nach Preis ab 8.03 EUR bis 14.17 EUR
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TP65H070G4PS | Hersteller : Transphorm |
MOSFET GAN FET 650V 29A TO220 |
auf Bestellung 1244 Stücke: Lieferzeit 10-14 Tag (e) |
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| TP65H070G4PS | Hersteller : TRANSPHORM |
Description: TRANSPHORM - TP65H070G4PS - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.085 ohm, 9 nC, TO-220AB, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 29A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 9nC Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pin(s) Produktpalette: SuperGaN Series productTraceability: No Drain-Source-Durchgangswiderstand: 0.085ohm |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |