TP65H070G4PS Renesas Electronics
| Anzahl | Privatkunde |
|---|---|
| 1+ | 14.91 EUR |
| 10+ | 8.23 EUR |
| 100+ | 7.54 EUR |
| 500+ | 6.37 EUR |
| 1000+ | 6.03 EUR |
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Technische Details TP65H070G4PS Renesas Electronics
Description: GANFET N-CH 650V 29A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V, Power Dissipation (Max): 96W (Tc), Vgs(th) (Max) @ Id: 4.7V @ 700µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 638 pF @ 400 V.
Weitere Produktangebote TP65H070G4PS nach Preis ab 6.19 EUR bis 16.99 EUR
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TP65H070G4PS | Renesas Electronics Corporation |
 Description: GANFET N-CH 650V 29A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 700µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 638 pF @ 400 V |
auf Bestellung 762 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H070G4PS | RENESAS |
Description: RENESAS - TP65H070G4PS - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.085 ohm, 9 nC, TO-220AB, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 29A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Ladung, typ.: 9nC SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pin(s) Produktpalette: SuperGaN Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Drain-Source-Durchgangswiderstand: 0.085ohm |
auf Bestellung 626 Stücke: Lieferzeit 14-21 Tag (e) |
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| TP65H070G4PS |
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Hersteller: Renesas Electronics Corporation
Description: GANFET N-CH 650V 29A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 700µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 638 pF @ 400 V
Description: GANFET N-CH 650V 29A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 700µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 638 pF @ 400 V
auf Bestellung 762 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 15.46 EUR |
| 50+ | 8.38 EUR |
| 100+ | 7.69 EUR |
| 500+ | 6.5 EUR |
| TP65H070G4PS |
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Hersteller: RENESAS
Description: RENESAS - TP65H070G4PS - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.085 ohm, 9 nC, TO-220AB, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 29A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 9nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-220AB
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.085ohm
Description: RENESAS - TP65H070G4PS - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.085 ohm, 9 nC, TO-220AB, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 29A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 9nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-220AB
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.085ohm
auf Bestellung 626 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 16.99 EUR |
| 27+ | 8.65 EUR |
| 100+ | 7.33 EUR |
| 500+ | 6.19 EUR |