TP65H070G4QS-TR Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: 650 V 29 A GAN FET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
auf Bestellung 1257 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 14.78 EUR |
| 10+ | 10.16 EUR |
| 100+ | 8.27 EUR |
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Technische Details TP65H070G4QS-TR Renesas Electronics Corporation
Description: 650 V 29 A GAN FET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V, Power Dissipation (Max): 96W (Tc), Vgs(th) (Max) @ Id: 4.8V @ 700µA, Supplier Device Package: TOLL, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V.
Weitere Produktangebote TP65H070G4QS-TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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TP65H070G4QS-TR | Hersteller : RENESAS |
Description: RENESAS - TP65H070G4QS-TR - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.085 ohm, 8.4 nC, TOLL, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 29A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 8.4nC Bauform - Transistor: TOLL Anzahl der Pins: 8Pin(s) Produktpalette: SuperGaN Series productTraceability: No Drain-Source-Durchgangswiderstand: 0.085ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 1919 Stücke: Lieferzeit 14-21 Tag (e) |
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TP65H070G4QS-TR | Hersteller : RENESAS |
Description: RENESAS - TP65H070G4QS-TR - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.085 ohm, 8.4 nC, TOLL, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 29A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 8.4nC Bauform - Transistor: TOLL Anzahl der Pins: 8Pin(s) Produktpalette: SuperGaN Series productTraceability: No Drain-Source-Durchgangswiderstand: 0.085ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 1919 Stücke: Lieferzeit 14-21 Tag (e) |
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TP65H070G4QS-TR | Hersteller : Renesas Electronics Corporation |
Description: 650 V 29 A GAN FET Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 700µA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V |
Produkt ist nicht verfügbar |
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TP65H070G4QS-TR | Hersteller : Transphorm |
GaN FETs GaN FET 650 V 29A TOLL |
Produkt ist nicht verfügbar |