TP65H100G4LSGB-TR RENESAS
Hersteller: RENESAS
Description: RENESAS - TP65H100G4LSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 18.9 A, 0.11 ohm, 14.4 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
Gate-Ladung, typ.: 14.4nC
SVHC: No SVHC (25-Jun-2025)
rohsCompliant: YES
Anzahl der Pins: 8Pin(s)
euEccn: NLR
isCanonical: N
hazardous: false
Drain-Source-Spannung Vds: 650V
Drain-Source-Durchgangswiderstand: 0.11ohm
rohsPhthalatesCompliant: YES
usEccn: EAR99
Dauer-Drainstrom Id: 18.9A
| Anzahl | Privatkunde |
|---|---|
| 100+ | 5.44 EUR |
| 500+ | 5.16 EUR |
| 1000+ | 4.9 EUR |
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Technische Details TP65H100G4LSGB-TR RENESAS
Description: Hi Volt FETs, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18.9A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V, Power Dissipation (Max): 65.8W (Tc), Vgs(th) (Max) @ Id: 4.1V @ 1.8mA, Supplier Device Package: 8-PQFN (8x8), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 818 pF @ 400 V.
Weitere Produktangebote TP65H100G4LSGB-TR nach Preis ab 4.56 EUR bis 10.53 EUR
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TP65H100G4LSGB-TR | RENESAS |
Description: RENESAS - TP65H100G4LSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 18.9 A, 0.11 ohm, 14.4 nC, PQFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 18.9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Ladung, typ.: 14.4nC SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: PQFN Anzahl der Pins: 8Pin(s) Produktpalette: SuperGaN Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Drain-Source-Durchgangswiderstand: 0.11ohm |
auf Bestellung 2941 Stücke: Lieferzeit 14-21 Tag (e) |
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| TP65H100G4LSGB-TR | Renesas Electronics Corporation |
Description: Hi Volt FETs Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.9A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V Power Dissipation (Max): 65.8W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 1.8mA Supplier Device Package: 8-PQFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 818 pF @ 400 V |
auf Bestellung 2870 Stücke: Lieferzeit 10-14 Tag (e) |
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| TP65H100G4LSGB-TR |
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Hersteller: RENESAS
Description: RENESAS - TP65H100G4LSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 18.9 A, 0.11 ohm, 14.4 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 18.9A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 14.4nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: PQFN
Anzahl der Pins: 8Pin(s)
Produktpalette: SuperGaN Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.11ohm
Description: RENESAS - TP65H100G4LSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 18.9 A, 0.11 ohm, 14.4 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 18.9A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 14.4nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: PQFN
Anzahl der Pins: 8Pin(s)
Produktpalette: SuperGaN Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.11ohm
auf Bestellung 2941 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 27+ | 9.42 EUR |
| 33+ | 7.13 EUR |
| 100+ | 5.44 EUR |
| 500+ | 5.16 EUR |
| 1000+ | 4.9 EUR |
| TP65H100G4LSGB-TR |
Hersteller: Renesas Electronics Corporation
Description: Hi Volt FETs
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.9A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 1.8mA
Supplier Device Package: 8-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 818 pF @ 400 V
Description: Hi Volt FETs
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.9A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 1.8mA
Supplier Device Package: 8-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 818 pF @ 400 V
auf Bestellung 2870 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.53 EUR |
| 10+ | 7.02 EUR |
| 100+ | 5.03 EUR |
| 500+ | 4.56 EUR |