TP65H100G4PS Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: Hi Volt FETs
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.9A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 1.8mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 818 pF @ 400 V
| Anzahl | Preis |
|---|---|
| 2+ | 9.91 EUR |
| 50+ | 5.25 EUR |
| 100+ | 4.8 EUR |
| 500+ | 4.01 EUR |
| 1000+ | 3.76 EUR |
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Technische Details TP65H100G4PS Renesas Electronics Corporation
Description: Hi Volt FETs, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18.9A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V, Power Dissipation (Max): 65.8W (Tc), Vgs(th) (Max) @ Id: 4.1V @ 1.8mA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 818 pF @ 400 V.
Weitere Produktangebote TP65H100G4PS nach Preis ab 4.75 EUR bis 10.07 EUR
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TP65H100G4PS | Hersteller : Renesas Electronics |
GaN FETs 650V, 100mohm GaN FET in TO220 |
auf Bestellung 695 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H100G4PS | Hersteller : RENESAS |
Description: RENESAS - TP65H100G4PS - Galliumnitrid (GaN)-Transistor, 650 V, 18.9 A, 0.11 ohm, 14.4 nC, TO-220, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 18.9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 14.4nC Bauform - Transistor: TO-220 Anzahl der Pins: 3Pin(s) Produktpalette: SuperGaN Series productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.11ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 965 Stücke: Lieferzeit 14-21 Tag (e) |