TP65H100G4PS Renesas Electronics
| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.73 EUR |
| 10+ | 6.33 EUR |
| 100+ | 5.7 EUR |
| 500+ | 4.84 EUR |
| 1000+ | 4.57 EUR |
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Technische Details TP65H100G4PS Renesas Electronics
Description: RENESAS - TP65H100G4PS - Galliumnitrid (GaN)-Transistor, 650 V, 18.9 A, 0.11 ohm, 14.4 nC, TO-220, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, euEccn: NLR, Drain-Source-Spannung Vds: 650V, rohsCompliant: YES, Dauer-Drainstrom Id: 18.9A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Gate-Ladung, typ.: 14.4nC, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: TO-220, Anzahl der Pins: 3Pin(s), Produktpalette: SuperGaN Series, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Drain-Source-Durchgangswiderstand: 0.11ohm.
Weitere Produktangebote TP65H100G4PS nach Preis ab 4.81 EUR bis 11.88 EUR
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TP65H100G4PS | Renesas Electronics Corporation |
 Description: Hi Volt FETsPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.9A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V Power Dissipation (Max): 65.8W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 1.8mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 818 pF @ 400 V |
auf Bestellung 938 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H100G4PS | RENESAS |
Description: RENESAS - TP65H100G4PS - Galliumnitrid (GaN)-Transistor, 650 V, 18.9 A, 0.11 ohm, 14.4 nC, TO-220, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 18.9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Ladung, typ.: 14.4nC SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-220 Anzahl der Pins: 3Pin(s) Produktpalette: SuperGaN Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Drain-Source-Durchgangswiderstand: 0.11ohm |
auf Bestellung 656 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| TP65H100G4PS |
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Hersteller: Renesas Electronics Corporation
Description: Hi Volt FETs
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.9A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 1.8mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 818 pF @ 400 V
Description: Hi Volt FETs
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.9A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 1.8mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 818 pF @ 400 V
auf Bestellung 938 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.88 EUR |
| 50+ | 6.3 EUR |
| 100+ | 5.76 EUR |
| 500+ | 4.81 EUR |
| TP65H100G4PS |
|
Hersteller: RENESAS
Description: RENESAS - TP65H100G4PS - Galliumnitrid (GaN)-Transistor, 650 V, 18.9 A, 0.11 ohm, 14.4 nC, TO-220, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 18.9A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 14.4nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-220
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.11ohm
Description: RENESAS - TP65H100G4PS - Galliumnitrid (GaN)-Transistor, 650 V, 18.9 A, 0.11 ohm, 14.4 nC, TO-220, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 18.9A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 14.4nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-220
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.11ohm
auf Bestellung 656 Stücke:
Lieferzeit 14-21 Tag (e)