TP65H150BG4JSG-TR Transphorm
Hersteller: TransphormDescription: GANFET N-CH 650V 13A QFN5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 6V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 400 V
auf Bestellung 2599 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.48 EUR |
| 10+ | 5.50 EUR |
| 100+ | 3.92 EUR |
| 500+ | 3.27 EUR |
| 1000+ | 3.12 EUR |
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Technische Details TP65H150BG4JSG-TR Transphorm
Description: GANFET N-CH 650V 13A QFN5X6, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 6V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 500µA, Supplier Device Package: 8-PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 400 V.
Weitere Produktangebote TP65H150BG4JSG-TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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TP65H150BG4JSG-TR | Hersteller : RENESAS |
Description: RENESAS - TP65H150BG4JSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 16 A, 0.18 ohm, 4.9 nC, PQFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 16A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 4.9nC Bauform - Transistor: PQFN Anzahl der Pins: 8Pin(s) Produktpalette: SuperGaN Series productTraceability: No Drain-Source-Durchgangswiderstand: 0.18ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 808 Stücke: Lieferzeit 14-21 Tag (e) |
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TP65H150BG4JSG-TR | Hersteller : RENESAS |
Description: RENESAS - TP65H150BG4JSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 16 A, 0.18 ohm, 4.9 nC, PQFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 16A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 4.9nC Bauform - Transistor: PQFN Anzahl der Pins: 8Pin(s) Produktpalette: SuperGaN Series productTraceability: No Drain-Source-Durchgangswiderstand: 0.18ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 808 Stücke: Lieferzeit 14-21 Tag (e) |
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TP65H150BG4JSG-TR | Hersteller : Transphorm |
Description: GANFET N-CH 650V 13A QFN5X6 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 6V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 500µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 400 V |
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