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TP65H150G4LSG

TP65H150G4LSG Transphorm

010_TP65H150G4LSG_3v5-2900669.pdf Hersteller: Transphorm
GaN FETs GAN FET 650V 13A TO220
auf Bestellung 2062 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.06 EUR
10+6.99 EUR
25+6.78 EUR
100+5.70 EUR
250+5.53 EUR
500+4.96 EUR
1000+4.22 EUR
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Technische Details TP65H150G4LSG Transphorm

Description: GAN FET N-CH 650V PQFN, Packaging: Tape & Reel (TR), Package / Case: 3-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V, Power Dissipation (Max): 52W (Tc), Vgs(th) (Max) @ Id: 4.8V @ 500µA, Supplier Device Package: 3-PQFN (8x8), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V.

Weitere Produktangebote TP65H150G4LSG nach Preis ab 4.48 EUR bis 8.48 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
TP65H150G4LSG TP65H150G4LSG Hersteller : Transphorm datasheet-tp65h150g4lsg-650v-gan-fet Description: GAN FET N-CH 650V PQFN
Packaging: Cut Tape (CT)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
auf Bestellung 2674 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.48 EUR
10+7.61 EUR
100+6.24 EUR
500+5.31 EUR
1000+4.48 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TP65H150G4LSG TP65H150G4LSG Hersteller : Transphorm datasheet-tp65h150g4lsg-650v-gan-fet Description: GAN FET N-CH 650V PQFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
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Im Einkaufswagen  Stück im Wert von  UAH