| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.12 EUR |
| 10+ | 8.02 EUR |
| 100+ | 5.9 EUR |
| 500+ | 5.24 EUR |
| 1000+ | 4.65 EUR |
| 1500+ | 4.24 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TP65H150G4LSG Renesas Electronics
Description: GAN FET N-CH 650V PQFN, Packaging: Tape & Reel (TR), Package / Case: 3-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V, Power Dissipation (Max): 52W (Tc), Vgs(th) (Max) @ Id: 4.8V @ 500µA, Supplier Device Package: 3-PQFN (8x8), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V.
Weitere Produktangebote TP65H150G4LSG nach Preis ab 4.9 EUR bis 9.59 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TP65H150G4LSG | Renesas Electronics Corporation |
 Description: GAN FET N-CH 650V PQFNPackaging: Cut Tape (CT) Package / Case: 3-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 500µA Supplier Device Package: 3-PQFN (8x8) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V |
auf Bestellung 2356 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
TP65H150G4LSG | Transphorm |
GaN FETs GAN FET 650V 13A TO220 |
auf Bestellung 2062 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TP65H150G4LSG |
|
Hersteller: Renesas Electronics Corporation
Description: GAN FET N-CH 650V PQFN
Packaging: Cut Tape (CT)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
Description: GAN FET N-CH 650V PQFN
Packaging: Cut Tape (CT)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
auf Bestellung 2356 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.29 EUR |
| 10+ | 8.33 EUR |
| 100+ | 6.83 EUR |
| 500+ | 5.82 EUR |
| 1000+ | 4.9 EUR |
| TP65H150G4LSG |
|
Hersteller: Transphorm
GaN FETs GAN FET 650V 13A TO220
GaN FETs GAN FET 650V 13A TO220
auf Bestellung 2062 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.59 EUR |
| 10+ | 8.32 EUR |
| 25+ | 8.07 EUR |
| 100+ | 6.78 EUR |
| 250+ | 6.58 EUR |
| 500+ | 5.9 EUR |
| 1000+ | 5.02 EUR |