auf Bestellung 1125 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 11.28 EUR |
| 10+ | 9.47 EUR |
| 100+ | 7.88 EUR |
| 500+ | 6.95 EUR |
| 1000+ | 6.25 EUR |
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Technische Details TP65H150G4PS Renesas Electronics
Description: GAN FET N-CH 650V TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 4.8V @ 500µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V.
Weitere Produktangebote TP65H150G4PS nach Preis ab 5.80 EUR bis 12.78 EUR
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TP65H150G4PS | Hersteller : Transphorm |
 Description: GAN FET N-CH 650V TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 500µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V |
auf Bestellung 2765 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H150G4PS | Hersteller : Transphorm |
GaN FETs GAN FET 650V 13A TO220 |
auf Bestellung 1145 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H150G4PS | Hersteller : RENESAS |
Description: RENESAS - TP65H150G4PS - Galliumnitrid (GaN)-Transistor, 650 V, 16 A, 0.18 ohm, 8 nC, TO-220, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 16A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 8nC Bauform - Transistor: TO-220 Anzahl der Pins: 3Pin(s) Produktpalette: SuperGaN Series productTraceability: No Drain-Source-Durchgangswiderstand: 0.18ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 1179 Stücke: Lieferzeit 14-21 Tag (e) |