TP65H150G4PS Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: GAN FET N-CH 650V TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 500µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
| Anzahl | Preis |
|---|---|
| 3+ | 7.32 EUR |
| 50+ | 3.77 EUR |
| 100+ | 3.43 EUR |
| 500+ | 2.83 EUR |
| 1000+ | 2.64 EUR |
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Technische Details TP65H150G4PS Renesas Electronics Corporation
Description: GAN FET N-CH 650V TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 4.8V @ 500µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V.
Weitere Produktangebote TP65H150G4PS nach Preis ab 5.93 EUR bis 12.78 EUR
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TP65H150G4PS | Hersteller : Renesas Electronics |
GaN FETs GAN FET 650V 13A TO220 |
auf Bestellung 1125 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H150G4PS | Hersteller : Transphorm |
GaN FETs GAN FET 650V 13A TO220 |
auf Bestellung 1145 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H150G4PS | Hersteller : RENESAS |
Description: RENESAS - TP65H150G4PS - Galliumnitrid (GaN)-Transistor, 650 V, 16 A, 0.18 ohm, 8 nC, TO-220, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 16A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 8nC Bauform - Transistor: TO-220 Anzahl der Pins: 3Pin(s) Produktpalette: SuperGaN Series productTraceability: No Drain-Source-Durchgangswiderstand: 0.18ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 1064 Stücke: Lieferzeit 14-21 Tag (e) |