TP65H150G4PS Renesas Electronics
| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.73 EUR |
| 10+ | 5.28 EUR |
| 100+ | 4.69 EUR |
| 500+ | 3.92 EUR |
| 1000+ | 3.83 EUR |
| 5000+ | 3.62 EUR |
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Technische Details TP65H150G4PS Renesas Electronics
Description: GAN FET N-CH 650V TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 4.8V @ 500µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V.
Weitere Produktangebote TP65H150G4PS nach Preis ab 2.8 EUR bis 15.21 EUR
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TP65H150G4PS | Renesas Electronics Corporation |
 Description: GAN FET N-CH 650V TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 500µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V |
auf Bestellung 914 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H150G4PS | RENESAS |
Description: RENESAS - TP65H150G4PS - Galliumnitrid (GaN)-Transistor, 650 V, 16 A, 0.18 ohm, 8 nC, TO-220, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 16A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Ladung, typ.: 8nC SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-220 Anzahl der Pins: 3Pin(s) Produktpalette: SuperGaN Series productTraceability: No usEccn: EAR99 Drain-Source-Durchgangswiderstand: 0.18ohm |
auf Bestellung 614 Stücke: Lieferzeit 14-21 Tag (e) |
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TP65H150G4PS | Transphorm |
GaN FETs GAN FET 650V 13A TO220 |
auf Bestellung 1145 Stücke: Lieferzeit 10-14 Tag (e) |
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| TP65H150G4PS | Renesas |
Trans MOSFET N-CH GaN 650V 16A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 953 Stücke: Lieferzeit 14-21 Tag (e) |
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| TP65H150G4PS | Renesas |
Trans MOSFET N-CH GaN 650V 16A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 953 Stücke: Lieferzeit 14-21 Tag (e) |
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| TP65H150G4PS |
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Hersteller: Renesas Electronics Corporation
Description: GAN FET N-CH 650V TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 500µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
Description: GAN FET N-CH 650V TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 500µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
auf Bestellung 914 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.33 EUR |
| 10+ | 6.87 EUR |
| 50+ | 5.39 EUR |
| 100+ | 4.9 EUR |
| 500+ | 4.07 EUR |
| TP65H150G4PS |
|
Hersteller: RENESAS
Description: RENESAS - TP65H150G4PS - Galliumnitrid (GaN)-Transistor, 650 V, 16 A, 0.18 ohm, 8 nC, TO-220, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 16A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 8nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-220
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.18ohm
Description: RENESAS - TP65H150G4PS - Galliumnitrid (GaN)-Transistor, 650 V, 16 A, 0.18 ohm, 8 nC, TO-220, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 16A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 8nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-220
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.18ohm
auf Bestellung 614 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 11.92 EUR |
| 24+ | 9.82 EUR |
| 100+ | 7.88 EUR |
| 500+ | 6.72 EUR |
| TP65H150G4PS |
|
Hersteller: Transphorm
GaN FETs GAN FET 650V 13A TO220
GaN FETs GAN FET 650V 13A TO220
auf Bestellung 1145 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 15.21 EUR |
| 10+ | 14.3 EUR |
| 50+ | 8.52 EUR |
| 100+ | 7.83 EUR |
| 250+ | 7.81 EUR |
| 500+ | 7.1 EUR |
| TP65H150G4PS |
|
Hersteller: Renesas
Trans MOSFET N-CH GaN 650V 16A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH GaN 650V 16A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 953 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 23+ | 7.9 EUR |
| 41+ | 4.25 EUR |
| 100+ | 3.7 EUR |
| 500+ | 3.02 EUR |
| TP65H150G4PS |
|
Hersteller: Renesas
Trans MOSFET N-CH GaN 650V 16A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH GaN 650V 16A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 953 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 23+ | 7.9 EUR |
| 41+ | 4.09 EUR |
| 100+ | 3.51 EUR |
| 500+ | 2.8 EUR |