| Anzahl | Preis |
|---|---|
| 1+ | 5.91 EUR |
| 10+ | 4.1 EUR |
| 100+ | 2.99 EUR |
| 500+ | 2.57 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TP65H300G4JSGB-TR Transphorm
Description: GANFET N-CH 650V 9.2A QFN5X6, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc), Rds On (Max) @ Id, Vgs: 312mOhm @ 6.5A, 6V, Power Dissipation (Max): 41.6W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 500µA, Supplier Device Package: 8-PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 400 V.
Weitere Produktangebote TP65H300G4JSGB-TR nach Preis ab 2.75 EUR bis 6.92 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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TP65H300G4JSGB-TR | Renesas Electronics Corporation |
 Description: GANFET N-CH 650V 9.2A QFN5X6Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Rds On (Max) @ Id, Vgs: 312mOhm @ 6.5A, 6V Power Dissipation (Max): 41.6W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 500µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 400 V |
auf Bestellung 3989 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H300G4JSGB-TR | RENESAS |
Description: RENESAS - TP65H300G4JSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 9.2 A, 0.312 ohm, 3.5 nC, PQFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 9.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 3.5nC Bauform - Transistor: PQFN Anzahl der Pins: 8Pin(s) Produktpalette: SuperGaN Series productTraceability: No Drain-Source-Durchgangswiderstand: 0.312ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 678 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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TP65H300G4JSGB-TR | RENESAS |
Description: RENESAS - TP65H300G4JSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 9.2 A, 0.312 ohm, 3.5 nC, PQFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 9.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 3.5nC Bauform - Transistor: PQFN Anzahl der Pins: 8Pin(s) Produktpalette: SuperGaN Series productTraceability: No Drain-Source-Durchgangswiderstand: 0.312ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 678 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| TP65H300G4JSGB-TR |
|
Hersteller: Renesas Electronics Corporation
Description: GANFET N-CH 650V 9.2A QFN5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 6.5A, 6V
Power Dissipation (Max): 41.6W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 400 V
Description: GANFET N-CH 650V 9.2A QFN5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 6.5A, 6V
Power Dissipation (Max): 41.6W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 400 V
auf Bestellung 3989 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.92 EUR |
| 10+ | 4.55 EUR |
| 100+ | 3.21 EUR |
| 500+ | 2.75 EUR |
| TP65H300G4JSGB-TR |
|
Hersteller: RENESAS
Description: RENESAS - TP65H300G4JSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 9.2 A, 0.312 ohm, 3.5 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 9.2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 3.5nC
Bauform - Transistor: PQFN
Anzahl der Pins: 8Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.312ohm
SVHC: No SVHC (25-Jun-2025)
Description: RENESAS - TP65H300G4JSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 9.2 A, 0.312 ohm, 3.5 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 9.2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 3.5nC
Bauform - Transistor: PQFN
Anzahl der Pins: 8Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.312ohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 678 Stücke:
Lieferzeit 14-21 Tag (e)
| TP65H300G4JSGB-TR |
|
Hersteller: RENESAS
Description: RENESAS - TP65H300G4JSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 9.2 A, 0.312 ohm, 3.5 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 9.2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 3.5nC
Bauform - Transistor: PQFN
Anzahl der Pins: 8Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.312ohm
SVHC: No SVHC (25-Jun-2025)
Description: RENESAS - TP65H300G4JSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 9.2 A, 0.312 ohm, 3.5 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 9.2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 3.5nC
Bauform - Transistor: PQFN
Anzahl der Pins: 8Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.312ohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 678 Stücke:
Lieferzeit 14-21 Tag (e)