auf Bestellung 6909 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.91 EUR |
| 10+ | 4.10 EUR |
| 100+ | 2.99 EUR |
| 500+ | 2.57 EUR |
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Technische Details TP65H300G4JSGB-TR Transphorm
Description: GANFET N-CH 650V 9.2A QFN5X6, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc), Rds On (Max) @ Id, Vgs: 312mOhm @ 6.5A, 6V, Power Dissipation (Max): 41.6W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 500µA, Supplier Device Package: 8-PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 400 V.
Weitere Produktangebote TP65H300G4JSGB-TR nach Preis ab 2.51 EUR bis 7.22 EUR
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TP65H300G4JSGB-TR | Hersteller : Transphorm |
 Description: GANFET N-CH 650V 9.2A QFN5X6Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Rds On (Max) @ Id, Vgs: 312mOhm @ 6.5A, 6V Power Dissipation (Max): 41.6W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 500µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 400 V |
auf Bestellung 3899 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H300G4JSGB-TR | Hersteller : RENESAS |
Description: RENESAS - TP65H300G4JSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 9.2 A, 0.312 ohm, 3.5 nC, PQFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 9.2A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 3.5nC Bauform - Transistor: PQFN Anzahl der Pins: 8Pin(s) Produktpalette: SuperGaN Series productTraceability: No Drain-Source-Durchgangswiderstand: 0.312ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 708 Stücke: Lieferzeit 14-21 Tag (e) |
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TP65H300G4JSGB-TR | Hersteller : RENESAS |
Description: RENESAS - TP65H300G4JSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 9.2 A, 0.312 ohm, 3.5 nC, PQFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 9.2A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 3.5nC Bauform - Transistor: PQFN Anzahl der Pins: 8Pin(s) Produktpalette: SuperGaN Series productTraceability: No Drain-Source-Durchgangswiderstand: 0.312ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 708 Stücke: Lieferzeit 14-21 Tag (e) |
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TP65H300G4JSGB-TR | Hersteller : Transphorm |
Description: GANFET N-CH 650V 9.2A QFN5X6 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Rds On (Max) @ Id, Vgs: 312mOhm @ 6.5A, 6V Power Dissipation (Max): 41.6W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 500µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 400 V |
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