TP65H300G4LSG-TR Transphorm
Hersteller: TransphormDescription: GANFET N-CH 650V 6.5A 3PQFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 5A, 8V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 2.79 EUR |
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Technische Details TP65H300G4LSG-TR Transphorm
Description: GANFET N-CH 650V 6.5A 3PQFN, Packaging: Tape & Reel (TR), Package / Case: 3-PowerDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), Rds On (Max) @ Id, Vgs: 312mOhm @ 5A, 8V, Power Dissipation (Max): 21W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 500µA, Supplier Device Package: 3-PQFN (8x8), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, Vgs (Max): ±18V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V.
Weitere Produktangebote TP65H300G4LSG-TR nach Preis ab 2.76 EUR bis 7.88 EUR
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TP65H300G4LSG-TR | Hersteller : Transphorm |
GaN FETs 650V, 240mOhm |
auf Bestellung 493 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H300G4LSG-TR | Hersteller : Renesas Electronics |
GaN FETs 650V, 240mOhm |
auf Bestellung 458 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H300G4LSG-TR | Hersteller : Transphorm |
Description: GANFET N-CH 650V 6.5A 3PQFN Packaging: Cut Tape (CT) Package / Case: 3-PowerDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 312mOhm @ 5A, 8V Power Dissipation (Max): 21W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 500µA Supplier Device Package: 3-PQFN (8x8) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V |
auf Bestellung 6351 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H300G4LSG-TR | Hersteller : RENESAS |
Description: RENESAS - TP65H300G4LSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 6.5 A, 0.312 ohm, 9.6 nC, PQFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 6.5A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 9.6nC Bauform - Transistor: PQFN Anzahl der Pins: 3Pin(s) Produktpalette: SuperGaN Series productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.312ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 633 Stücke: Lieferzeit 14-21 Tag (e) |
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TP65H300G4LSG-TR | Hersteller : RENESAS |
Description: RENESAS - TP65H300G4LSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 6.5 A, 0.312 ohm, 9.6 nC, PQFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 6.5A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 9.6nC Bauform - Transistor: PQFN Anzahl der Pins: 3Pin(s) Produktpalette: SuperGaN Series productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.312ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 633 Stücke: Lieferzeit 14-21 Tag (e) |