TP65H300G4LSG-TR Transphorm
Hersteller: Transphorm
Description: GANFET N-CH 650V 6.5A 3PQFN
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 8 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 8V
Part Status: Active
Supplier Device Package: 3-PQFN (8x8)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Power Dissipation (Max): 21W (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 5A, 8V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerDFN
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 2.79 EUR |
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Technische Details TP65H300G4LSG-TR Transphorm
Description: GANFET N-CH 650V 6.5A 3PQFN, Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 8 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±18V, Drive Voltage (Max Rds On, Min Rds On): 8V, Part Status: Active, Supplier Device Package: 3-PQFN (8x8), Vgs(th) (Max) @ Id: 2.6V @ 500µA, Power Dissipation (Max): 21W (Tc), Rds On (Max) @ Id, Vgs: 312mOhm @ 5A, 8V, Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-PowerDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote TP65H300G4LSG-TR nach Preis ab 2.76 EUR bis 7.88 EUR
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TP65H300G4LSG-TR | Transphorm |
GaN FETs 650V, 240mOhm |
auf Bestellung 493 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H300G4LSG-TR | Renesas Electronics |
GaN FETs 650V, 240mOhm |
auf Bestellung 458 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H300G4LSG-TR | Transphorm |
Description: GANFET N-CH 650V 6.5A 3PQFN Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 8 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±18V Drive Voltage (Max Rds On, Min Rds On): 8V Part Status: Active Supplier Device Package: 3-PQFN (8x8) Vgs(th) (Max) @ Id: 2.6V @ 500µA Power Dissipation (Max): 21W (Tc) Rds On (Max) @ Id, Vgs: 312mOhm @ 5A, 8V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-PowerDFN Packaging: Cut Tape (CT) |
auf Bestellung 6351 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H300G4LSG-TR | RENESAS |
Description: RENESAS - TP65H300G4LSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 6.5 A, 0.312 ohm, 9.6 nC, PQFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 6.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 9.6nC Bauform - Transistor: PQFN Anzahl der Pins: 3Pin(s) Produktpalette: SuperGaN Series productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.312ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 562 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TP65H300G4LSG-TR | RENESAS |
Description: RENESAS - TP65H300G4LSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 6.5 A, 0.312 ohm, 9.6 nC, PQFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 6.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 9.6nC Bauform - Transistor: PQFN Anzahl der Pins: 3Pin(s) Produktpalette: SuperGaN Series productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.312ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 562 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| TP65H300G4LSG-TR |
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Hersteller: Transphorm
GaN FETs 650V, 240mOhm
GaN FETs 650V, 240mOhm
auf Bestellung 493 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 6.56 EUR |
| 10+ | 4.56 EUR |
| 100+ | 3.36 EUR |
| 500+ | 2.9 EUR |
| TP65H300G4LSG-TR |
|
Hersteller: Renesas Electronics
GaN FETs 650V, 240mOhm
GaN FETs 650V, 240mOhm
auf Bestellung 458 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 7.22 EUR |
| 10+ | 4.88 EUR |
| 100+ | 3.47 EUR |
| 500+ | 3.04 EUR |
| 1000+ | 2.94 EUR |
| 3000+ | 2.76 EUR |
| TP65H300G4LSG-TR |
|
Hersteller: Transphorm
Description: GANFET N-CH 650V 6.5A 3PQFN
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 8 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 8V
Part Status: Active
Supplier Device Package: 3-PQFN (8x8)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Power Dissipation (Max): 21W (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 5A, 8V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerDFN
Packaging: Cut Tape (CT)
Description: GANFET N-CH 650V 6.5A 3PQFN
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 8 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 8V
Part Status: Active
Supplier Device Package: 3-PQFN (8x8)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Power Dissipation (Max): 21W (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 5A, 8V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 6351 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 7.88 EUR |
| 10+ | 5.08 EUR |
| 100+ | 3.61 EUR |
| 500+ | 2.99 EUR |
| 1000+ | 2.85 EUR |
| TP65H300G4LSG-TR |
|
Hersteller: RENESAS
Description: RENESAS - TP65H300G4LSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 6.5 A, 0.312 ohm, 9.6 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 6.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 9.6nC
Bauform - Transistor: PQFN
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand: 0.312ohm
SVHC: No SVHC (25-Jun-2025)
Description: RENESAS - TP65H300G4LSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 6.5 A, 0.312 ohm, 9.6 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 6.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 9.6nC
Bauform - Transistor: PQFN
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand: 0.312ohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 562 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| TP65H300G4LSG-TR |
|
Hersteller: RENESAS
Description: RENESAS - TP65H300G4LSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 6.5 A, 0.312 ohm, 9.6 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 6.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 9.6nC
Bauform - Transistor: PQFN
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand: 0.312ohm
SVHC: No SVHC (25-Jun-2025)
Description: RENESAS - TP65H300G4LSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 6.5 A, 0.312 ohm, 9.6 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 6.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 9.6nC
Bauform - Transistor: PQFN
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand: 0.312ohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 562 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH