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TP65H300G4LSG-TR

TP65H300G4LSG-TR Transphorm

TP65H300G4LSG_v1.2-2.pdf Hersteller: Transphorm
Description: GANFET N-CH 650V 6.5A 3PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 5A, 8V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+2.84 EUR
Mindestbestellmenge: 3000
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Technische Details TP65H300G4LSG-TR Transphorm

Description: GANFET N-CH 650V 6.5A 3PQFN, Packaging: Cut Tape (CT), Package / Case: 3-PowerDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), Rds On (Max) @ Id, Vgs: 312mOhm @ 5A, 8V, Power Dissipation (Max): 21W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 500µA, Supplier Device Package: 3-PQFN (8x8), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, Vgs (Max): ±18V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V.

Weitere Produktangebote TP65H300G4LSG-TR nach Preis ab 3.01 EUR bis 6.6 EUR

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Preis ohne MwSt
TP65H300G4LSG-TR TP65H300G4LSG-TR Hersteller : Transphorm TP65H300G4LSG_v1.2-2.pdf Description: GANFET N-CH 650V 6.5A 3PQFN
Packaging: Cut Tape (CT)
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 5A, 8V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
auf Bestellung 3557 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.84 EUR
10+ 4.89 EUR
100+ 3.96 EUR
500+ 3.52 EUR
1000+ 3.01 EUR
Mindestbestellmenge: 4
TP65H300G4LSG-TR TP65H300G4LSG-TR Hersteller : Transphorm TP65H300G4LSG_2v4-1838764.pdf MOSFET 650V, 240mOhm
auf Bestellung 640 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6.6 EUR
10+ 5.54 EUR
25+ 5.35 EUR
100+ 4.49 EUR
250+ 4.33 EUR
500+ 4 EUR
1000+ 3.41 EUR
TP65H300G4LSG-TR Hersteller : TRANSPHORM 4156859.pdf Description: TRANSPHORM - TP65H300G4LSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 6.5 A, 0.312 ohm, 9.6 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 6.5A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 9.6nC
Bauform - Transistor: PQFN
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.312ohm
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)