TP65H300G4LSGB-TR RENESAS
Hersteller: RENESAS
Description: RENESAS - TP65H300G4LSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 6.5 A, 0.312 ohm, 5 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 6.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Gate-Ladung, typ.: 5nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: PQFN
Anzahl der Pins: 8Pin(s)
Produktpalette: SuperGaN Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.312ohm
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Technische Details TP65H300G4LSGB-TR RENESAS
Description: GANFET N-CH 650V 6.5A QFN8X8, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), Rds On (Max) @ Id, Vgs: 312mOhm @ 6.5A, 6V, Power Dissipation (Max): 21W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 500µA, Supplier Device Package: 8-PQFN (8x8), Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V.
Weitere Produktangebote TP65H300G4LSGB-TR nach Preis ab 2.7 EUR bis 9.02 EUR
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TP65H300G4LSGB-TR | Transphorm |
GaN FETs GAN FET 650V 6.5A QFN8x8 |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H300G4LSGB-TR | Renesas Electronics |
GaN FETs GAN FET 650V 6.5A QFN8x8 |
auf Bestellung 3980 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H300G4LSGB-TR | Renesas Electronics Corporation |
Description: GANFET N-CH 650V 6.5A QFN8X8 Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 312mOhm @ 6.5A, 6V Power Dissipation (Max): 21W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 500µA Supplier Device Package: 8-PQFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V |
auf Bestellung 2992 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H300G4LSGB-TR | RENESAS |
Description: RENESAS - TP65H300G4LSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 6.5 A, 0.312 ohm, 5 nC, PQFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 6.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Ladung, typ.: 5nC SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: PQFN Anzahl der Pins: 8Pin(s) Produktpalette: SuperGaN Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Drain-Source-Durchgangswiderstand: 0.312ohm |
auf Bestellung 614 Stücke: Lieferzeit 14-21 Tag (e) |
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Hersteller: Transphorm
GaN FETs GAN FET 650V 6.5A QFN8x8
GaN FETs GAN FET 650V 6.5A QFN8x8
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.81 EUR |
| 10+ | 4.71 EUR |
| 100+ | 3.45 EUR |
| 500+ | 2.92 EUR |
| TP65H300G4LSGB-TR |
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Hersteller: Renesas Electronics
GaN FETs GAN FET 650V 6.5A QFN8x8
GaN FETs GAN FET 650V 6.5A QFN8x8
auf Bestellung 3980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.04 EUR |
| 10+ | 5.32 EUR |
| 100+ | 3.75 EUR |
| 500+ | 3.17 EUR |
| 3000+ | 2.95 EUR |
| 6000+ | 2.7 EUR |
| TP65H300G4LSGB-TR |
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Hersteller: Renesas Electronics Corporation
Description: GANFET N-CH 650V 6.5A QFN8X8
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 6.5A, 6V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V
Description: GANFET N-CH 650V 6.5A QFN8X8
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 6.5A, 6V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V
auf Bestellung 2992 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.21 EUR |
| 10+ | 5.4 EUR |
| 100+ | 3.81 EUR |
| 500+ | 3.22 EUR |
| TP65H300G4LSGB-TR |
|
Hersteller: RENESAS
Description: RENESAS - TP65H300G4LSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 6.5 A, 0.312 ohm, 5 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 6.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 5nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: PQFN
Anzahl der Pins: 8Pin(s)
Produktpalette: SuperGaN Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.312ohm
Description: RENESAS - TP65H300G4LSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 6.5 A, 0.312 ohm, 5 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 6.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 5nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: PQFN
Anzahl der Pins: 8Pin(s)
Produktpalette: SuperGaN Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.312ohm
auf Bestellung 614 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 9.02 EUR |
| 42+ | 5.55 EUR |
| 100+ | 3.59 EUR |
| 500+ | 3.49 EUR |