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TP65H300G4LSGB-TR

TP65H300G4LSGB-TR Transphorm

TP65H300G4LSGB_0v1-3359785.pdf Hersteller: Transphorm
MOSFET GAN FET 650V 6.5A QFN8x8
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+5.03 EUR
10+ 4.22 EUR
25+ 3.98 EUR
100+ 3.41 EUR
250+ 3.22 EUR
500+ 3.03 EUR
1000+ 2.6 EUR
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Technische Details TP65H300G4LSGB-TR Transphorm

Description: GANFET N-CH 650V 6.5A QFN8X8, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), Rds On (Max) @ Id, Vgs: 312mOhm @ 6.5A, 6V, Power Dissipation (Max): 21W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 500µA, Supplier Device Package: 8-PQFN (8x8), Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V.

Weitere Produktangebote TP65H300G4LSGB-TR nach Preis ab 2.62 EUR bis 5.07 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TP65H300G4LSGB-TR TP65H300G4LSGB-TR Hersteller : Transphorm datasheet-tp65h300g4lsgb Description: GANFET N-CH 650V 6.5A QFN8X8
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 6.5A, 6V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V
auf Bestellung 2979 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.07 EUR
10+ 4.26 EUR
100+ 3.45 EUR
500+ 3.06 EUR
1000+ 2.62 EUR
Mindestbestellmenge: 4
TP65H300G4LSGB-TR Hersteller : TRANSPHORM 4156860.pdf Description: TRANSPHORM - TP65H300G4LSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 6.5 A, 0.312 ohm, 5 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 6.5A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 5nC
Bauform - Transistor: PQFN
Anzahl der Pins: 8Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.312ohm
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H300G4LSGB-TR TP65H300G4LSGB-TR Hersteller : Transphorm datasheet-tp65h300g4lsgb Description: GANFET N-CH 650V 6.5A QFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 6.5A, 6V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V
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