TP65H480G4JSG-TR Renesas Electronics
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.92 EUR |
| 10+ | 2.51 EUR |
| 100+ | 1.69 EUR |
| 500+ | 1.34 EUR |
| 1000+ | 1.24 EUR |
| 2000+ | 1.19 EUR |
| 4000+ | 1.01 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TP65H480G4JSG-TR Renesas Electronics
Description: GANFET N-CH 650V 3.6A 3PQFN, Packaging: Tape & Reel (TR), Package / Case: 3-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Cascode Gallium Nitride FET), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc), Rds On (Max) @ Id, Vgs: 560mOhm @ 3.4A, 8V, Power Dissipation (Max): 13.2W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 500µA, Supplier Device Package: 3-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, Vgs (Max): ±18V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V.
Weitere Produktangebote TP65H480G4JSG-TR nach Preis ab 1.23 EUR bis 7.38 EUR
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TP65H480G4JSG-TR | Renesas Electronics Corporation |
 Description: GANFET N-CH 650V 3.6A 3PQFNPackaging: Cut Tape (CT) Package / Case: 3-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Cascode Gallium Nitride FET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Rds On (Max) @ Id, Vgs: 560mOhm @ 3.4A, 8V Power Dissipation (Max): 13.2W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 500µA Supplier Device Package: 3-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V |
auf Bestellung 1119 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H480G4JSG-TR | Transphorm |
GaN FETs 650V, 480mOhm |
auf Bestellung 3113 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H480G4JSG-TR | RENESAS |
Description: RENESAS - TP65H480G4JSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 3.6 A, 0.56 ohm, 9 nC, PQFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 3.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Ladung, typ.: 9nC SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: PQFN Anzahl der Pins: 3Pin(s) Produktpalette: SuperGaN Series productTraceability: No usEccn: EAR99 Drain-Source-Durchgangswiderstand: 0.56ohm |
auf Bestellung 921 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TP65H480G4JSG-TR | RENESAS |
Description: RENESAS - TP65H480G4JSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 3.6 A, 0.56 ohm, 9 nC, PQFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 3.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Gate-Ladung, typ.: 9nC SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: PQFN Anzahl der Pins: 3Pin(s) Produktpalette: SuperGaN Series productTraceability: No usEccn: EAR99 Drain-Source-Durchgangswiderstand: 0.56ohm |
auf Bestellung 921 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| TP65H480G4JSG-TR |
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Hersteller: Renesas Electronics Corporation
Description: GANFET N-CH 650V 3.6A 3PQFN
Packaging: Cut Tape (CT)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.4A, 8V
Power Dissipation (Max): 13.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 3-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Description: GANFET N-CH 650V 3.6A 3PQFN
Packaging: Cut Tape (CT)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.4A, 8V
Power Dissipation (Max): 13.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 3-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
auf Bestellung 1119 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.92 EUR |
| 10+ | 2.5 EUR |
| 100+ | 1.69 EUR |
| 500+ | 1.34 EUR |
| 1000+ | 1.23 EUR |
| TP65H480G4JSG-TR |
|
Hersteller: Transphorm
GaN FETs 650V, 480mOhm
GaN FETs 650V, 480mOhm
auf Bestellung 3113 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.38 EUR |
| 10+ | 4.9 EUR |
| 25+ | 4.88 EUR |
| 100+ | 3.52 EUR |
| 500+ | 3.12 EUR |
| 1000+ | 3.09 EUR |
| 2000+ | 2.89 EUR |
| TP65H480G4JSG-TR |
|
Hersteller: RENESAS
Description: RENESAS - TP65H480G4JSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 3.6 A, 0.56 ohm, 9 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 9nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: PQFN
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.56ohm
Description: RENESAS - TP65H480G4JSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 3.6 A, 0.56 ohm, 9 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 9nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: PQFN
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.56ohm
auf Bestellung 921 Stücke:
Lieferzeit 14-21 Tag (e)
| TP65H480G4JSG-TR |
|
Hersteller: RENESAS
Description: RENESAS - TP65H480G4JSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 3.6 A, 0.56 ohm, 9 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Gate-Ladung, typ.: 9nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: PQFN
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.56ohm
Description: RENESAS - TP65H480G4JSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 3.6 A, 0.56 ohm, 9 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Gate-Ladung, typ.: 9nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: PQFN
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.56ohm
auf Bestellung 921 Stücke:
Lieferzeit 14-21 Tag (e)