TP65H480G4JSG-TR Renesas Electronics
auf Bestellung 2058 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.45 EUR |
| 10+ | 2.87 EUR |
| 100+ | 2.15 EUR |
| 4000+ | 1.36 EUR |
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Technische Details TP65H480G4JSG-TR Renesas Electronics
Description: GANFET N-CH 650V 3.6A 3PQFN, Packaging: Tape & Reel (TR), Package / Case: 3-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Cascode Gallium Nitride FET), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc), Rds On (Max) @ Id, Vgs: 560mOhm @ 3.4A, 8V, Power Dissipation (Max): 13.2W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 500µA, Supplier Device Package: 3-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, Vgs (Max): ±18V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V.
Weitere Produktangebote TP65H480G4JSG-TR nach Preis ab 2.42 EUR bis 6.86 EUR
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TP65H480G4JSG-TR | Hersteller : Transphorm |
 GaN FETs 650V, 480mOhm |
auf Bestellung 3113 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H480G4JSG-TR | Hersteller : Transphorm |
Description: GANFET N-CH 650V 3.6A 3PQFN Packaging: Cut Tape (CT) Package / Case: 3-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Cascode Gallium Nitride FET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Rds On (Max) @ Id, Vgs: 560mOhm @ 3.4A, 8V Power Dissipation (Max): 13.2W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 500µA Supplier Device Package: 3-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V |
auf Bestellung 1255 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H480G4JSG-TR | Hersteller : RENESAS |
Description: RENESAS - TP65H480G4JSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 3.6 A, 0.56 ohm, 9 nC, PQFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 3.6A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 9nC Bauform - Transistor: PQFN Anzahl der Pins: 3Pin(s) Produktpalette: SuperGaN Series productTraceability: No Drain-Source-Durchgangswiderstand: 0.56ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 963 Stücke: Lieferzeit 14-21 Tag (e) |
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TP65H480G4JSG-TR | Hersteller : RENESAS |
Description: RENESAS - TP65H480G4JSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 3.6 A, 0.56 ohm, 9 nC, PQFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 3.6A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 9nC Bauform - Transistor: PQFN Anzahl der Pins: 3Pin(s) Produktpalette: SuperGaN Series productTraceability: No Drain-Source-Durchgangswiderstand: 0.56ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 963 Stücke: Lieferzeit 14-21 Tag (e) |
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TP65H480G4JSG-TR | Hersteller : Transphorm |
Description: GANFET N-CH 650V 3.6A 3PQFN Packaging: Tape & Reel (TR) Package / Case: 3-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Cascode Gallium Nitride FET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Rds On (Max) @ Id, Vgs: 560mOhm @ 3.4A, 8V Power Dissipation (Max): 13.2W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 500µA Supplier Device Package: 3-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V |
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