TP65H480G4JSG-TR Renesas Electronics
| Anzahl | Preis |
|---|---|
| 1+ | 3.08 EUR |
| 10+ | 1.78 EUR |
| 100+ | 1.33 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 1 EUR |
| 4000+ | 0.85 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TP65H480G4JSG-TR Renesas Electronics
Description: GANFET N-CH 650V 3.6A 3PQFN, Packaging: Tape & Reel (TR), Package / Case: 3-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Cascode Gallium Nitride FET), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc), Rds On (Max) @ Id, Vgs: 560mOhm @ 3.4A, 8V, Power Dissipation (Max): 13.2W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 500µA, Supplier Device Package: 3-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, Vgs (Max): ±18V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V.
Weitere Produktangebote TP65H480G4JSG-TR nach Preis ab 1.02 EUR bis 6.2 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TP65H480G4JSG-TR | Renesas Electronics Corporation |
 Description: GANFET N-CH 650V 3.6A 3PQFNPackaging: Cut Tape (CT) Package / Case: 3-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Cascode Gallium Nitride FET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Rds On (Max) @ Id, Vgs: 560mOhm @ 3.4A, 8V Power Dissipation (Max): 13.2W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 500µA Supplier Device Package: 3-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V |
auf Bestellung 1119 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
TP65H480G4JSG-TR | Transphorm |
GaN FETs 650V, 480mOhm |
auf Bestellung 3113 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
TP65H480G4JSG-TR | RENESAS |
Description: RENESAS - TP65H480G4JSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 3.6 A, 0.56 ohm, 9 nC, PQFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 3.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 9nC Bauform - Transistor: PQFN Anzahl der Pins: 3Pin(s) Produktpalette: SuperGaN Series productTraceability: No Drain-Source-Durchgangswiderstand: 0.56ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 927 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
|
TP65H480G4JSG-TR | RENESAS |
Description: RENESAS - TP65H480G4JSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 3.6 A, 0.56 ohm, 9 nC, PQFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 3.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 9nC Bauform - Transistor: PQFN Anzahl der Pins: 3Pin(s) Produktpalette: SuperGaN Series productTraceability: No Drain-Source-Durchgangswiderstand: 0.56ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 927 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| TP65H480G4JSG-TR |
|
Hersteller: Renesas Electronics Corporation
Description: GANFET N-CH 650V 3.6A 3PQFN
Packaging: Cut Tape (CT)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.4A, 8V
Power Dissipation (Max): 13.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 3-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Description: GANFET N-CH 650V 3.6A 3PQFN
Packaging: Cut Tape (CT)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.4A, 8V
Power Dissipation (Max): 13.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 3-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
auf Bestellung 1119 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.26 EUR |
| 10+ | 2.08 EUR |
| 100+ | 1.41 EUR |
| 500+ | 1.12 EUR |
| 1000+ | 1.02 EUR |
| TP65H480G4JSG-TR |
|
Hersteller: Transphorm
GaN FETs 650V, 480mOhm
GaN FETs 650V, 480mOhm
auf Bestellung 3113 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 6.2 EUR |
| 10+ | 4.12 EUR |
| 25+ | 4.1 EUR |
| 100+ | 2.96 EUR |
| 500+ | 2.62 EUR |
| 1000+ | 2.6 EUR |
| 2000+ | 2.43 EUR |
| TP65H480G4JSG-TR |
|
Hersteller: RENESAS
Description: RENESAS - TP65H480G4JSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 3.6 A, 0.56 ohm, 9 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 9nC
Bauform - Transistor: PQFN
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.56ohm
SVHC: No SVHC (25-Jun-2025)
Description: RENESAS - TP65H480G4JSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 3.6 A, 0.56 ohm, 9 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 9nC
Bauform - Transistor: PQFN
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.56ohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 927 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| TP65H480G4JSG-TR |
|
Hersteller: RENESAS
Description: RENESAS - TP65H480G4JSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 3.6 A, 0.56 ohm, 9 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 9nC
Bauform - Transistor: PQFN
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.56ohm
SVHC: No SVHC (25-Jun-2025)
Description: RENESAS - TP65H480G4JSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 3.6 A, 0.56 ohm, 9 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 9nC
Bauform - Transistor: PQFN
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.56ohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 927 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH