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TP65H480G4JSGB-TR

TP65H480G4JSGB-TR Transphorm

datasheet-tp65h480g4jsgb-650v-gan-fet Hersteller: Transphorm
Description: GANFET N-CH 650V 3.6A QFN5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3A, 6V
Power Dissipation (Max): 13.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 400 V
auf Bestellung 3938 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.68 EUR
10+ 3.89 EUR
100+ 3.1 EUR
500+ 2.62 EUR
1000+ 2.22 EUR
2000+ 2.11 EUR
Mindestbestellmenge: 4
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Technische Details TP65H480G4JSGB-TR Transphorm

Description: GANFET N-CH 650V 3.6A QFN5X6, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc), Rds On (Max) @ Id, Vgs: 560mOhm @ 3A, 6V, Power Dissipation (Max): 13.2W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 500µA, Supplier Device Package: 8-PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 400 V.

Weitere Produktangebote TP65H480G4JSGB-TR nach Preis ab 2.16 EUR bis 4.79 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TP65H480G4JSGB-TR TP65H480G4JSGB-TR Hersteller : Transphorm TP65H480G4JSGB_1v3-3244301.pdf MOSFET GAN FET 650V 3.6A QFN5x6
auf Bestellung 3898 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.79 EUR
10+ 3.98 EUR
100+ 3.15 EUR
250+ 2.92 EUR
500+ 2.66 EUR
1000+ 2.27 EUR
2500+ 2.16 EUR
TP65H480G4JSGB-TR Hersteller : TRANSPHORM 4156862.pdf Description: TRANSPHORM - TP65H480G4JSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 3.6 A, 0.56 ohm, 5 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.6A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 5nC
Bauform - Transistor: PQFN
Anzahl der Pins: 8Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.56ohm
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H480G4JSGB-TR TP65H480G4JSGB-TR Hersteller : Transphorm datasheet-tp65h480g4jsgb-650v-gan-fet Description: GANFET N-CH 650V 3.6A QFN5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3A, 6V
Power Dissipation (Max): 13.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 400 V
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