TP65H480G4JSGB-TR Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: GANFET N-CH 650V 3.6A QFN5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3A, 6V
Power Dissipation (Max): 13.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 400 V
| Anzahl | Preis |
|---|---|
| 6+ | 3.26 EUR |
| 10+ | 2.08 EUR |
| 100+ | 1.41 EUR |
| 500+ | 1.12 EUR |
| 1000+ | 1.02 EUR |
| 2000+ | 0.98 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TP65H480G4JSGB-TR Renesas Electronics Corporation
Description: GANFET N-CH 650V 3.6A QFN5X6, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc), Rds On (Max) @ Id, Vgs: 560mOhm @ 3A, 6V, Power Dissipation (Max): 13.2W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 500µA, Supplier Device Package: 8-PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 400 V.
Weitere Produktangebote TP65H480G4JSGB-TR nach Preis ab 2.08 EUR bis 5.05 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TP65H480G4JSGB-TR | Hersteller : Transphorm |
GaN FETs GAN FET 650V 3.6A QFN5x6 |
auf Bestellung 3828 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
TP65H480G4JSGB-TR | Hersteller : RENESAS |
Description: RENESAS - TP65H480G4JSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 3.6 A, 0.56 ohm, 5 nC, PQFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 3.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 5nC Bauform - Transistor: PQFN Anzahl der Pins: 8Pin(s) Produktpalette: SuperGaN Series productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.56ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 937 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||
|
|
TP65H480G4JSGB-TR | Hersteller : RENESAS |
Description: RENESAS - TP65H480G4JSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 3.6 A, 0.56 ohm, 5 nC, PQFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 3.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 5nC Bauform - Transistor: PQFN Anzahl der Pins: 8Pin(s) Produktpalette: SuperGaN Series productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.56ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 937 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||
|
|
TP65H480G4JSGB-TR | Hersteller : Renesas Electronics Corporation |
Description: GANFET N-CH 650V 3.6A QFN5X6 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Rds On (Max) @ Id, Vgs: 560mOhm @ 3A, 6V Power Dissipation (Max): 13.2W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 500µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 400 V |
Produkt ist nicht verfügbar |