TP70H480G4JSG-TR Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: 700V, 480MOHM GAN FET IN 5X6 PQF
Packaging: Cut Tape (CT)
Package / Case: 2-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3A, 6V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 3-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 400 V
| Anzahl | Privatkunde |
|---|---|
| 6+ | 4.06 EUR |
| 10+ | 2.59 EUR |
| 100+ | 1.76 EUR |
| 500+ | 1.39 EUR |
| 1000+ | 1.29 EUR |
| 2000+ | 1.24 EUR |
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Technische Details TP70H480G4JSG-TR Renesas Electronics Corporation
Description: 700V, 480MOHM GAN FET IN 5X6 PQF, Packaging: Tape & Reel (TR), Package / Case: 2-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C, Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 560mOhm @ 3A, 6V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 500µA, Supplier Device Package: 3-PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 400 V.
Weitere Produktangebote TP70H480G4JSG-TR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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TP70H480G4JSG-TR | RENESAS |
Description: RENESAS - TP70H480G4JSG-TR - Galliumnitrid (GaN)-Transistor, 700 V, 5 A, 0.56 ohm, 5.2 nC, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 700V rohsCompliant: YES Dauer-Drainstrom Id: 5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 5.2nC Bauform - Transistor: QFN Anzahl der Pins: 3Pin(s) Produktpalette: SuperGaN Series productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.56ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 3991 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| TP70H480G4JSG-TR |
|
Hersteller: RENESAS
Description: RENESAS - TP70H480G4JSG-TR - Galliumnitrid (GaN)-Transistor, 700 V, 5 A, 0.56 ohm, 5.2 nC, QFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 700V
rohsCompliant: YES
Dauer-Drainstrom Id: 5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 5.2nC
Bauform - Transistor: QFN
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand: 0.56ohm
SVHC: No SVHC (25-Jun-2025)
Description: RENESAS - TP70H480G4JSG-TR - Galliumnitrid (GaN)-Transistor, 700 V, 5 A, 0.56 ohm, 5.2 nC, QFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 700V
rohsCompliant: YES
Dauer-Drainstrom Id: 5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 5.2nC
Bauform - Transistor: QFN
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand: 0.56ohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 3991 Stücke:
Lieferzeit 14-21 Tag (e)