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TP86R203NL,LQ

TP86R203NL,LQ Toshiba Semiconductor and Storage

TP86R203NL_datasheet_en_20140225.pdf?did=14088&prodName=TP86R203NL Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 19A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.54 EUR
5000+0.52 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TP86R203NL,LQ Toshiba Semiconductor and Storage

Description: MOSFET N CH 30V 19A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), Rds On (Max) @ Id, Vgs: 6.2mOhm @ 9A, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 200µA, Supplier Device Package: 8-SOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V.

Weitere Produktangebote TP86R203NL,LQ nach Preis ab 0.57 EUR bis 1.74 EUR

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TP86R203NL,LQ TP86R203NL,LQ Hersteller : Toshiba TP86R203NL_datasheet_en_20140225-1150670.pdf MOSFETs N-Ch DTMOS VII-H 1.9W 1050pF 19A 30V
auf Bestellung 4931 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.37 EUR
10+1.12 EUR
100+0.87 EUR
250+0.85 EUR
500+0.73 EUR
1000+0.6 EUR
2500+0.57 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TP86R203NL,LQ TP86R203NL,LQ Hersteller : Toshiba Semiconductor and Storage TP86R203NL_datasheet_en_20140225.pdf?did=14088&prodName=TP86R203NL Description: MOSFET N CH 30V 19A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
auf Bestellung 13055 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.74 EUR
16+1.17 EUR
100+0.81 EUR
500+0.65 EUR
1000+0.6 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
TP86R203NL,LQ TP86R203NL,LQ Hersteller : Toshiba 1497tp86r203nl_datasheet_en_20140225.pdf.pdf Trans MOSFET N-CH Si 30V 19A 8-Pin SOP T/R
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