TP86R203NL,LQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET N CH 30V 19A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.86 EUR |
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Technische Details TP86R203NL,LQ Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 19A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), Rds On (Max) @ Id, Vgs: 6.2mOhm @ 9A, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 200µA, Supplier Device Package: 8-SOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V.
Weitere Produktangebote TP86R203NL,LQ nach Preis ab 0.86 EUR bis 2.06 EUR
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TP86R203NL,LQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N CH 30V 19A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 9A, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 200µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V |
auf Bestellung 9005 Stücke: Lieferzeit 21-28 Tag (e) |
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TP86R203NL,LQ | Hersteller : Toshiba |
MOSFET N-Ch DTMOS VII-H 1.9W 1050pF 19A 30V |
auf Bestellung 4980 Stücke: Lieferzeit 14-28 Tag (e) |
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