TPAR3G S1G Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE AVALANCHE 400V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Avalanche
Capacitance @ Vr, F: 58pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE AVALANCHE 400V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Avalanche
Capacitance @ Vr, F: 58pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details TPAR3G S1G Taiwan Semiconductor Corporation
Description: DIODE AVALANCHE 400V 3A TO277A, Packaging: Tape & Reel (TR), Package / Case: TO-277, 3-PowerDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 120 ns, Technology: Avalanche, Capacitance @ Vr, F: 58pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: TO-277A (SMPC), Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 3 A, Current - Reverse Leakage @ Vr: 10 µA @ 400 V.
Weitere Produktangebote TPAR3G S1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
|
TPAR3G S1G | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE AVALANCHE 400V 3A TO277A Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120 ns Technology: Avalanche Capacitance @ Vr, F: 58pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
Produkt ist nicht verfügbar |
|
 |
TPAR3G S1G | Hersteller : Taiwan Semiconductor |
 Rectifiers 120ns, 3A, 400V, Fast Recovery Rectifier |
Produkt ist nicht verfügbar |