TPC6109-H(TE85L,FM Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 5A VS-6
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: VS-6 (2.9x2.8)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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Technische Details TPC6109-H(TE85L,FM Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 5A VS-6, Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: VS-6 (2.9x2.8), Vgs(th) (Max) @ Id: 1.2V @ 200µA, Power Dissipation (Max): 700mW (Ta), Rds On (Max) @ Id, Vgs: 59mOhm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).
Weitere Produktangebote TPC6109-H(TE85L,FM
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TPC6109-H(TE85L,FM | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 5A VS-6 Rds On (Max) @ Id, Vgs: 59mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: VS-6 (2.9x2.8) Vgs(th) (Max) @ Id: 1.2V @ 200µA Power Dissipation (Max): 700mW (Ta) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TPC6109-H(TE85L,FM |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 5A VS-6
Rds On (Max) @ Id, Vgs: 59mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: VS-6 (2.9x2.8)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Power Dissipation (Max): 700mW (Ta)
Description: MOSFET P-CH 30V 5A VS-6
Rds On (Max) @ Id, Vgs: 59mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: VS-6 (2.9x2.8)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Power Dissipation (Max): 700mW (Ta)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH