TPC8062-H,LQ(CM Toshiba Semiconductor and Storage

Description: MOSFET N-CH 30V 18A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.173", 4.40mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 9A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2.3V @ 300µA, Supplier Device Package: 8-SOP, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V.