TPC8111(TE12L,Q,M) Toshiba Semiconductor and Storage

Description: MOSFET P-CH 30V 11A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.173", 4.40mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 12mOhm @ 5.5A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: 8-SOP (5.5x6.0), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5710 pF @ 10 V.