Technische Details TPC8124(TE12L,V,M) Toshiba
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -40V; -12A; 1.9W; SOP8, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -40V, Drain current: -12A, Power dissipation: 1.9W, Case: SOP8, Gate-source voltage: -25...20V, On-state resistance: 6.1mΩ, Mounting: SMD, Gate charge: 104nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote TPC8124(TE12L,V,M)
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TPC8124(TE12L,V,M) | Hersteller : TOSHIBA |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -12A; 1.9W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -12A Power dissipation: 1.9W Case: SOP8 Gate-source voltage: -25...20V On-state resistance: 6.1mΩ Mounting: SMD Gate charge: 104nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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TPC8124(TE12L,V,M) | Hersteller : TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -12A; 1.9W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -12A Power dissipation: 1.9W Case: SOP8 Gate-source voltage: -25...20V On-state resistance: 6.1mΩ Mounting: SMD Gate charge: 104nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |