TPC8125,LQ(S Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 10 V
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.61 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2500 Stücke
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Technische Details TPC8125,LQ(S Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 10A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2V @ 500µA, Supplier Device Package: 8-SOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 10 V.
Weitere Produktangebote TPC8125,LQ(S nach Preis ab 0.55 EUR bis 1.93 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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TPC8125,LQ(S | Toshiba |
Trans MOSFET P-CH Si 30V 10A 8-Pin SOP T/R |
auf Bestellung 539 Stücke: Lieferzeit 14-21 Tag (e) |
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TPC8125,LQ(S | Toshiba |
Trans MOSFET P-CH Si 30V 10A 8-Pin SOP T/R |
auf Bestellung 576 Stücke: Lieferzeit 14-21 Tag (e) |
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TPC8125,LQ(S | Toshiba |
MOSFETs P-Ch -30V FET 2580pF -10A 1.9W |
auf Bestellung 7427 Stücke: Lieferzeit 10-14 Tag (e) |
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TPC8125,LQ(S | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 10A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 500µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 10 V |
auf Bestellung 4525 Stücke: Lieferzeit 10-14 Tag (e) |
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TPC8125,LQ(S | TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -10A; 1W; SOP8 Mounting: SMD Case: SOP8 Power dissipation: 1W Gate charge: 64nC Polarisation: unipolar Drain current: -10A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: -25...20V Kind of package: reel; tape On-state resistance: 10mΩ |
auf Bestellung 888 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| TPC8125,LQ(S |
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Hersteller: Toshiba
Trans MOSFET P-CH Si 30V 10A 8-Pin SOP T/R
Trans MOSFET P-CH Si 30V 10A 8-Pin SOP T/R
auf Bestellung 539 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 247+ | 0.71 EUR |
| 258+ | 0.68 EUR |
| 500+ | 0.63 EUR |
| TPC8125,LQ(S |
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Hersteller: Toshiba
Trans MOSFET P-CH Si 30V 10A 8-Pin SOP T/R
Trans MOSFET P-CH Si 30V 10A 8-Pin SOP T/R
auf Bestellung 576 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 162+ | 1.76 EUR |
| 200+ | 1.23 EUR |
| 500+ | 0.8 EUR |
| TPC8125,LQ(S |
|
Hersteller: Toshiba
MOSFETs P-Ch -30V FET 2580pF -10A 1.9W
MOSFETs P-Ch -30V FET 2580pF -10A 1.9W
auf Bestellung 7427 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.89 EUR |
| 10+ | 1.33 EUR |
| 100+ | 0.89 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.64 EUR |
| 2500+ | 0.6 EUR |
| 5000+ | 0.55 EUR |
| TPC8125,LQ(S |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 10A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 10 V
Description: MOSFET P-CH 30V 10A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 10 V
auf Bestellung 4525 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 1.93 EUR |
| 15+ | 1.49 EUR |
| 100+ | 0.99 EUR |
| 500+ | 0.77 EUR |
| 1000+ | 0.7 EUR |
| TPC8125,LQ(S |
|
Hersteller: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; 1W; SOP8
Mounting: SMD
Case: SOP8
Power dissipation: 1W
Gate charge: 64nC
Polarisation: unipolar
Drain current: -10A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: -25...20V
Kind of package: reel; tape
On-state resistance: 10mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; 1W; SOP8
Mounting: SMD
Case: SOP8
Power dissipation: 1W
Gate charge: 64nC
Polarisation: unipolar
Drain current: -10A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: -25...20V
Kind of package: reel; tape
On-state resistance: 10mΩ
auf Bestellung 888 Stücke:
Lieferzeit 14-21 Tag (e)