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TPC8125,LQ(S

TPC8125,LQ(S Toshiba Semiconductor and Storage

TPC8125_datasheet_en_20131101.pdf?did=1895&prodName=TPC8125
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 10A 8SOP
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2V @ 500µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 10 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.51 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TPC8125,LQ(S Toshiba Semiconductor and Storage

Description: MOSFET P-CH 30V 10A 8SOP, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): +20V, -25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2V @ 500µA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 10 V.

Weitere Produktangebote TPC8125,LQ(S nach Preis ab 0.41 EUR bis 1.62 EUR

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TPC8125,LQ(S TPC8125,LQ(S Hersteller : TOSHIBA TPC8125.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; 1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Power dissipation: 1W
Case: SOP8
Gate-source voltage: -25...20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1632 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.33 EUR
87+0.82 EUR
125+0.57 EUR
250+0.49 EUR
500+0.44 EUR
1000+0.41 EUR
Mindestbestellmenge: 54
Im Einkaufswagen  Stück im Wert von  UAH
TPC8125,LQ(S TPC8125,LQ(S Hersteller : Toshiba 7B8BC878C7580C45C907B46B69E7583B2E43D1F9D83762E98424EAFE19EE9F76.pdf MOSFETs P-Ch -30V FET 2580pF -10A 1.9W
auf Bestellung 7427 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.59 EUR
10+1.12 EUR
100+0.75 EUR
500+0.58 EUR
1000+0.54 EUR
2500+0.5 EUR
5000+0.46 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TPC8125,LQ(S TPC8125,LQ(S Hersteller : Toshiba Semiconductor and Storage TPC8125_datasheet_en_20131101.pdf?did=1895&prodName=TPC8125 Description: MOSFET P-CH 30V 10A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2V @ 500µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 4525 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.62 EUR
15+1.25 EUR
100+0.83 EUR
500+0.65 EUR
1000+0.59 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH