TPC8125,LQ(S Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 10A 8SOP
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2V @ 500µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 10 V
Produktrezensionen
Produktbewertung abgeben
Technische Details TPC8125,LQ(S Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 10A 8SOP, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): +20V, -25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2V @ 500µA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 10 V.
Weitere Produktangebote TPC8125,LQ(S nach Preis ab 0.49 EUR bis 1.93 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TPC8125,LQ(S | TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -10A; 1W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -10A Power dissipation: 1W Case: SOP8 Gate-source voltage: -25...20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1612 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
TPC8125,LQ(S | Toshiba |
MOSFETs P-Ch -30V FET 2580pF -10A 1.9W |
auf Bestellung 7427 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
TPC8125,LQ(S | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 10A 8SOP Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +20V, -25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2V @ 500µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 4525 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TPC8125,LQ(S |
|
Hersteller: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; 1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Power dissipation: 1W
Case: SOP8
Gate-source voltage: -25...20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; 1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Power dissipation: 1W
Case: SOP8
Gate-source voltage: -25...20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1612 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 54+ | 1.58 EUR |
| 87+ | 0.98 EUR |
| 125+ | 0.68 EUR |
| 250+ | 0.58 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.49 EUR |
| TPC8125,LQ(S |
|
Hersteller: Toshiba
MOSFETs P-Ch -30V FET 2580pF -10A 1.9W
MOSFETs P-Ch -30V FET 2580pF -10A 1.9W
auf Bestellung 7427 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.89 EUR |
| 10+ | 1.33 EUR |
| 100+ | 0.89 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.64 EUR |
| 2500+ | 0.6 EUR |
| 5000+ | 0.55 EUR |
| TPC8125,LQ(S |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 10A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2V @ 500µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 10A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2V @ 500µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 4525 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 1.93 EUR |
| 15+ | 1.49 EUR |
| 100+ | 0.99 EUR |
| 500+ | 0.77 EUR |
| 1000+ | 0.7 EUR |